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Chapter 4 Bipolar Junction Transistors(BJTs)

Chapter 4 Bipolar Junction Transistors(BJTs). Chapter 4. Chapter 4-1 Basics Chapter 4-2 Analysis Chapter 4-3 Biasing & Configuration Chapter 4-4 Application & Characteristics of the Real Transistor. Chapter 4 Bipolar Junction Transistors(BJTs). Introduction (4-3). Biasing The BJT

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Chapter 4 Bipolar Junction Transistors(BJTs)

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  1. Chapter 4 Bipolar Junction Transistors(BJTs) Chapter 4 • Chapter 4-1 • Basics • Chapter 4-2 • Analysis • Chapter 4-3 • Biasing & Configuration • Chapter 4-4 • Application & Characteristics of the Real Transistor

  2. Chapter 4 Bipolar Junction Transistors(BJTs) Introduction (4-3) • Biasing The BJT • Design Strategy • Biasing Using a Single Power Supply • Biasing Using Two Power Supplies • An Alternative Biasing Arrangement • Biasing Using a Current Source • Amplifier Configurations • Common-Emitter Amplifier • Common-Emitter Amplifier (With Re) • Common-Emitter Amplifer (특징) • Common-Base Amplifier • Common-Base Amplifer (특징) • Common-Collector Amplifier (Emitter Follower) • Common-Collector Amplifer (특징) • TR As a Switch • A Simple Switching Circuit • Cutoff Region • Active Region • Saturation Region • Example 1 (Saturation-Mode) • Example 2 (Saturation-Mode)

  3. BIASING THE BJT Chapter 4 Bipolar Junction Transistors(BJTs) Design Strategy ① 동작점이 온도와 β값의 변동에 무관하도록 설계 ② Output signal swing이 최대가 되도록 설계

  4. But ② Lower RB value results in a lowering of the input resistance of the amplifier BIASING THE BJT Chapter 4 Bipolar Junction Transistors(BJTs) Biasing Using a Single Power Supply ① ① ②

  5. BIASING THE BJT Chapter 4 Bipolar Junction Transistors(BJTs) Biasing Using Two Power Supplies 특징: ① Base에 신호원 인가시 RB필요.(예: common-collector, common-emitter) ② Base를 ground시키면 bias current가 β에 무관해짐.(예:common-base)

  6. BIASING THE BJT Chapter 4 Bipolar Junction Transistors(BJTs) An Alternative Biasing Arrangement 특징: ① 이 회로의 Bias stability는 RB의 negative feedback 작용을 통해 얻어진다. ② common-emitter amplifiers에 적합

  7. 전류원을 구현한 예 BIASING THE BJT Chapter 4 Bipolar Junction Transistors(BJTs) Biasing Using a Current Source < Current Mirror > 특징:

  8. BASIC SINGLE-STAGE BJT AMPLIFIER CONFIGURATIONS Chapter 4 Bipolar Junction Transistors(BJTs) The Common-Emitter Amplifier

  9. BASIC SINGLE-STAGE BJT AMPLIFIER CONFIGURATIONS Chapter 4 Bipolar Junction Transistors(BJTs) The Common-Emitter Amplifier(with a Resistance) Resistance-reflection rule

  10. BASIC SINGLE-STAGE BJT AMPLIFIER CONFIGURATIONS Chapter 4 Bipolar Junction Transistors(BJTs) The Common-Emitter Amplifier(특징) ① CE provides Substantial voltage and current gains ② Input resistance: moderate value ③ Ouput resistance: high value (disadvantage) ④ Multistage high-gain amplifiers에서 Voltage gain의 본체는 일반적으로 하나 이상의 CE stage들로 구성된다. ⑤ High frequency response: poor (disadvantage) Re를 가지고 있는 경우 ① voltage gain은 감소(disadvantage) ② Voltage gain이 β에 덜 민감하다. ③ Input resistance: 만큼 증가. ④ 찌그러짐 없이 보통보다 신호원에 배 더 큰 신호을 인가할 수 있다. ⑤ High frequency response가 눈에 띄게 향상된다.

  11. BASIC SINGLE-STAGE BJT AMPLIFIER CONFIGURATIONS Chapter 4 Bipolar Junction Transistors(BJTs) The Common-Base Amplifier

  12. BASIC SINGLE-STAGE BJT AMPLIFIER CONFIGURATIONS Chapter 4 Bipolar Junction Transistors(BJTs) The Common-Base Amplifier(특징) ① Current Gain 1 ② Input resistance: Low value ③ Ouput resistance: RC에 의해 결정 ④ Voltage Gain이 RS값의 변화에민감하다.⇒ voltage amp.에는 부적합하다. ⑤ Unit-Gain Current Amplifier (Current buffer)에 응용됨. ⑥ High frequency response : excellent (advantage)

  13. BASIC SINGLE-STAGE BJT AMPLIFIER CONFIGURATIONS Chapter 4 Bipolar Junction Transistors(BJTs) The Common-Collector Amplifier (Emitter Follower)

  14. BASIC SINGLE-STAGE BJT AMPLIFIER CONFIGURATIONS Chapter 4 Bipolar Junction Transistors(BJTs) The Common-Collector Amplifier (특징) ① Voltage Gain ≤ 1 ② Input resistance: High value ③ Ouput resistance: Low value (advantage) ④ Current Gain: Large value ⑤ Voltage buffer Amplifier에 응용됨. ⑥ Multistage amplifiers에서 주로 output stage에 사용됨.

  15. THE TR AS A SWITCH-CUTOFF AND SATURATION Chapter 4 Bipolar Junction Transistors(BJTs) A Simple Switching Circuit

  16. THE TR AS A SWITCH-CUTOFF AND SATURATION Chapter 4 Bipolar Junction Transistors(BJTs) Cutoff Region

  17. THE TR AS A SWITCH-CUTOFF AND SATURATION Chapter 4 Bipolar Junction Transistors(BJTs) Active Region

  18. Forced β: << β in active mode THE TR AS A SWITCH-CUTOFF AND SATURATION Chapter 4 Bipolar Junction Transistors(BJTs) Saturation Region 0.2 V

  19. THE TR AS A SWITCH-CUTOFF AND SATURATION Chapter 4 Bipolar Junction Transistors(BJTs) Example 1 ( Saturation-Mode) Ex. 4.13>

  20. THE TR AS A SWITCH-CUTOFF AND SATURATION Chapter 4 Bipolar Junction Transistors(BJTs) Example 2 ( Saturation-Mode) Ex. 4.14>

  21. Chapter 4 Bipolar Junction Transistors(BJTs) Summary (4-3) • 여러가지 Source를 사용한 Biasing 방법(Single Power Supply, Two Power Supplies, Current Source, Alternative Arrangement) • Single-stage Configuration방법(Common-Emitter, Common-Base, Common-Collector) • Resistance-reflection rule • TR의 Switching 특성.(Cutoff, Saturation)

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