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Fabrication of Single Crystal Silicon Nanosurfaces

Fabrication of Single Crystal Silicon Nanosurfaces. A. Sprunt & A. Slocum. Fracture fabrication of planar surface pairs with nanometer scale roughness or perfect complementarity whose separation can be precisely controlled.

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Fabrication of Single Crystal Silicon Nanosurfaces

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  1. Fabrication of Single Crystal Silicon Nanosurfaces A. Sprunt & A. Slocum • Fracture fabrication of planar surface pairs with nanometer scale roughness or perfect complementarity whose separation can be precisely controlled. • Fabrication of an electrostatically actuated variable parallel plate capacitor with fractured silicon surfaces for electrodes. • Fabrication of parallel nanosurface pairs by anisotropic etching of (110) silicon wafers and the surrounding structure necessary to precisely control the separation of those surfaces.

  2. Two-Stage Device Experimented with different specimen orientations, specimen thicknesses, and notching techniques.

  3. Fracture Surfaces

  4. Variable Capacitor

  5. Predicted Performance & Fabrication • Native oxide thickness: 4 nm • Minimum stable gap: 4 nm • Capacitor Voltage: 1 V Native Oxide Thickness Composite micrograph of process development device released in air.

  6. Timeline

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