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CONCLUSION

CONCLUSION. W e investigated the effect of the p - AlGaN EBL on efficiency droop in InGaN / GaN MQW LEDs. At low current density, LEDs with an EBL show a higher EQE than LEDs without an EBL. However, LEDs without an EBL show a higher EQE at high current density.

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CONCLUSION

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  1. CONCLUSION • We investigated the effect of the p-AlGaNEBL on efficiency droop in InGaN/GaN MQW LEDs. • At low current density, LEDs with an EBL show a higher EQE than LEDs without an EBL. However, LEDs without an EBL show a higher EQE at high current density. • The increment in EQE for LEDs without an EBL is 5.6% and 8.6% at 90 A/cm2, compared to LEDs with a p-Al0.22GaN and a p-Al0.32GaN EBL, respectively. • The suppression of efficiency droop in LEDs without an EBL at high current density is attributed to an increased hole injection efficiency.

  2. REFERENCES • 1Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, andM. R. Krames, Appl. Phys. Lett. 91, 141101 2007. • 2盧盈充國立彰化師範大學光電科技研究所碩士論文,變化井障厚度對氮化銦鎵藍光發光二極體Efficiency Droop 之研究,,中華民國九十八年六月 • 3E. F. Schubert, Light-Emitting Diodes Cambridge University Press, Cambridge,2003.

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