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Anna Macchiolo* * Max-Planck-Institut f ü r Physik

RD50 Recent Results Development of radiation hard sensors for SLHC. on behalf of the RD50 Collaboration. OUTLINE. Anna Macchiolo* * Max-Planck-Institut f ü r Physik. The RD50 Collaboration: scope and methods Defect characterization Results on irradiated detectors

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Anna Macchiolo* * Max-Planck-Institut f ü r Physik

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  1. RD50 Recent Results Development of radiation hard sensors for SLHC on behalf of the RD50 Collaboration OUTLINE Anna Macchiolo**Max-Planck-Institut für Physik • The RD50 Collaboration: scope and methods • Defect characterization • Results on irradiated detectors • Planar pixel productions • 3D sensor developments http://www.cern.ch/rd50

  2. Development of Radiation Hard Semiconductor Devices for High Luminosity Colliders 247 Members from 47 Institutes 38 European institutesBelarus (Minsk), Belgium (Louvain), Czech Republic (Prague (3x)), Finland (Helsinki, Lappeenranta), Germany (Dortmund, Erfurt, Freiburg, Hamburg, Karlsruhe, Munich), Italy (Bari, Florence, Padova, Perugia, Pisa, Trento), Lithuania (Vilnius), Netherlands (NIKHEF), Norway (Oslo (2x)), Poland (Warsaw(2x)), Romania (Bucharest (2x)),Russia (Moscow, St.Petersburg), Slovenia (Ljubljana), Spain (Barcelona, Valencia), Switzerland (CERN, PSI), Ukraine (Kiev), UnitedKingdom (Glasgow, Lancaster, Liverpool) 8 North-American institutesCanada (Montreal), USA (BNL, Fermilab, New Mexico, Purdue, Rochester, Santa Cruz, Syracuse) 1 Middle East instituteIsrael (Tel Aviv) Detailed member list: http://cern.ch/rd50 RD50: Nov.2001 collaboration formed ; June 2002 approved by CERN

  3. Motivation:Signal degradation for LHC Silicon Sensors Pixel sensors:max. cumulated fluence for LHC Strip sensors:max. cumulated fluence for LHC A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -3-

  4. Motivation:Signal degradation for LHC Silicon Sensors Pixel sensors:max. cumulated fluence for LHC andSLHC Strip sensors:max. cumulated fluence for LHC andSLHC A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -4-

  5. RD50 approaches to develop radiation harder tracking detectors • Material Engineering -- Defect Engineering of Silicon • Understanding radiation damage • Macroscopic effects and Microscopic defects • Simulation of defect properties & kinetics • Irradiation with different particles & energies • Oxygen rich Silicon • DOFZ, Cz, MCZ, EPI • Oxygen dimer & hydrogen enriched Silicon • Influence of processing technology • Material Engineering-New Materials(work concluded) • Silicon Carbide (SiC), Gallium Nitride (GaN) • Device Engineering (New Detector Designs) • p-type silicon detectors (n-in-p) • thin detectors • 3D detectors • Simulation of highly irradiated detectors • Semi 3D detectors and Stripixels • Cost effective detectors • Development of test equipment and measurement recommendations Radiation Damage to Sensors: • Bulk damagedue to NIEL • Change of effective doping concentration • Increase of leakage current • Increase of charge carrier trapping • Surface damagedue to IEL (accumulation of positive charge in oxide & interface charges) A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -5-

  6. standardfor particledetectors used for LHC Pixel detectors “new”siliconmaterial Silicon Material under Investigation • DOFZ silicon- Enriched with oxygen on wafer level, inhomogeneous distribution of oxygen • CZ/MCZ silicon- high Oi (oxygen) and O2i (oxygen dimer) concentration (homogeneous) - formation of shallow Thermal Donors possible • Epi silicon- high Oi , O2i content due to out-diffusion from the CZ substrate (inhomogeneous) - thin layers: high doping possible (low starting resistivity) • Epi-Do silicon - as EPI, however additional Oi diffused reaching homogeneous Oi content A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -6-

  7. Defect Characterization - WODEAN • WODEAN project (initiated in 2006, 10 RD50 institutes, guided by G.Lindstroem, Hamburg) • Aim: Identify defects responsible for Trapping, Leakage Current, Change of Neff • Method: Defect Analysis on identical samples performed with the various tools available inside the RD50 network (DLTS, TSC, TCT, etc.) • ~ 240 samples irradiated with protons and neutrons • Example: identification of defects responsible for long term / reverse annealing • Cluster related defects H(116K), H(140K) and H(152K) (not present after g-irradiation) observed in neutron irradiated n-type Si diodes during 80oC annealing • Concentrations are increasing with annealing time  contribute to long term/ reverse annealing • Neff can be calculated from measured defect concentrations with TSC including BD and E(30K) defects • Comparison with Neff from CV-measurements shows a very good compatibility A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -7-

  8. Summary – defects with strong impact on the device properties at operating temperature Point defects EiBD = Ec – 0.225 eV nBD =2.310-14 cm2 EiI = Ec – 0.545 eV nI =2.310-14 cm2 pI =2.310-14 cm2 Cluster related centers Ei116K = Ev + 0.33eV p116K =410-14 cm2 Ei140K = Ev + 0.36eV p140K =2.510-15 cm2 Ei152K = Ev + 0.42eV p152K =2.310-14 cm2 Ei30K = Ec - 0.1eV n30K =2.310-14 cm2 0 charged at RT +/- charged at RT E30K 0/+ P0/+ VO -/0 BD 0/++ V2 -/0 Ip0/- H152K 0/- H140K0/- H116K0/- CiOi+/0 B 0/- extended defects Point defects positive charge (higher introduction after proton irradiation than after neutron irradiation) positive charge (high concentration in oxygen rich material) leakage current+ neg. charge(current after  irradiation) Reverse annealing(neg. charge) I.Pintilie, NSS, 21 October 2008, Dresden A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -8-

  9. Silicon materials for Tracking Sensors Note: Measured partly under different conditions! Lines to guide the eye (no modeling)! • Signal comparison for various Silicon sensors • n-in-p microstrip p-type FZ detectors (Micron, 280 or 300mm thick, 80mm pitch) • Detectors read-out with 40MHz (SCT 128A) A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -9-

  10. Silicon materials for Tracking Sensors Note: Measured partly under different conditions! Lines to guide the eye (no modeling)! • Signal comparison for various Silicon sensors LHC SLHC n-in-p technology should be sufficient for Super-LHC at radii presently (LHC) occupied by strip sensors highest fluence for strip detectors in LHC: The used p-in-n technology is sufficient A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -10-

  11. Charge Multiplication –FZ Strip Sensors • CCE increases at SLHC fluences over the expectations • CCE>100%  charge multiplication! • Most results showing an anomalous high charge collection efficiency have been obtained until now with Micron FZ n-on-p strip detectors • Read-out with SCT128A, 25 ns shaping • Possible dependence on manufacturer process details investigated with measurements on sensors from a second producer (Hamamatsu Photonics) within the “ATLAS Upgrade Strip Sensor Collaboration” • Studies concentrated on fluences relevant to pixels (ATLAS Insertable B-layer and SLHC) • Preliminary results show a compatible CCE behaviour [ M. Mikuž, Hiroshima Symposium 2009 ]

  12. Charge Multiplication –Epi Diodes • Epi diodes, 75 and 150 mm thick • Measured trapping probability found to be proportional to fluence and consistent with values extracted in FZ • Multiplication effect more evident for 75 mm diodes • Smaller penetration depth (670 nm laser)  stronger charge multiplication n-type, a

  13. Mixed irradiations: 23 GeV protons+neutrons Micron diodes irradiated with protons first and then with 2e14 n cm-2 (control samples p-only, open marker) 80min@60oC 80min@60oC [ G. Kramberger, 13th RD50 Workshop,Nov. 2008, http://dx.doi.org/10.1016/j.nima.2009.08.030 ] gc can be + or - always + • FZ-p,n: increase of Vfd proportional to Feq • MCz-n: decrease of Vfd , due to different signs of gc,n and gc,p • MCz-p at larger fluences the increase of Vfd is not proportional to the added fluence • –as if material becomes more “n-like” with fluence – same as observed in annealing plots A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -13-

  14. Mixed Irradiations (Neutrons+Protons) • Mixed irradiation performed with: • 5x1014 p (1 MeV equivalent fluence) • 5x1014 n (1 MeV equivalent fluence) 1x1015 neq cm-2 More charge collected at 500 V after additional irradiation! [T.Affolder 13th RD50 Workshop, Nov.2008] • Both FZ and MCz show “predicted” behaviour with mixed irradiation • FZ doses add • |Neff| increases • MCz doses compensate • |Neff| decreases, proton damage compensate part of the neutron damage A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -14-

  15. Planar pixel productions • MPP-HLL thin pixel production (75 and 150 mm) on n- and p-type FZ silicon using a wafer bonding technique that allows variable thicknesses down to 50 mm • Pre-irradiation characterization of the p-type wafers shows high yield and good breakdown performances p-type pixels n-in-n wafer design [M. Beimforde 14th RD50 Workshop, June 2009] • RD50 Planar Pixel project : production of pixels at CiS (CMS and ATLAS geometries) on FZ and MCz silicon with R&D focus on: - direct comparison of n-in-n and n-in-p performances - slim edges (needed for inner pixel layers in ATLAS) - Pixel isolation methods (moderated, uniform p-spray)

  16. n+ columns metal oxide p-type substrate p+columns Development of 3D detectors • “3D” electrodes:- narrow columns along detector thickness, - diameter: 10mm, distance: 50 - 100mm • Lateral depletion:- decoupling of detector thickness and charge collection distance - lower depletion voltage needed - fast signal - radiation hard 3D-DDTC • Fabrication of 3D detectors challenging: modified design under investigation within RD50 • Columnar electrodes of both doping types are etched into the detector from both wafer sides • Columns are not etched through the entire detector: no need for wafer bonding technology but column overlap defines the performance. • Two manufacturers: CNM (Barcelona): 14 wafers (p- and n-type) completed Oct. 2008 FBK (Trento): 3 3D-DDTC batches fabricated with different overlaps A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -16-

  17. front column back column 3D-DTC sensors –Test-beam data • Device from FBK: p-type strip sensor, 50 mm column overlap • Test-beam at CERN:225 GeV/c muons and APV25 analogue readout (40 MHz) strips with highest and 2nd highest signal joined into clusters No clustering 2D efficiency at 40 V for Q>2fC Strip structure is clearly visible only when clustering is not applied. Overall efficiency: 97.3% Overall efficiency: 98.6% [M.Koehler 14th RD50 Workshop, June.2009] A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -17-

  18. Test equipment: ALIBAVA • ALIBAVA – A LIverpool BArcelona VAlenciacollaboration • System supported by RD50: Will enable more RD50 groups to investigate strip sensors with ‘LHC-like’ electronics • Plug and Play System: Software part (PC) and hardware part connected by USB. • Hardware part: a dual board based system connected by flat cable. • Mother board intended: • To process the analogue data that comes from the readout chips. • To process the trigger input signal in case of radioactive source setup or to generate a trigger signal if a laser setup is used. • To control the hardware part. • To communicate with a PC via USB. • Daughter board • It contains two Beetle readout chips • It has fan-ins and detector support to interface the sensors. • Software part: • It controls the whole system (configuration, calibration and acquisition). • It generates an output file for further data processing. [R.Marco-Hernández, 13th RD50 Workshop, Nov.2008] A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -18-

  19. RD50 achievements & links to LHC Experiments Some important contributions of RD50 towards the SLHC detectors: • p-type silicon (brought forward by RD50 community) is now considered to be the base line option for the ATLAS Strip Tracker upgrade • n- MCZ (introduced by RD50 community) has improved performance in mixed fields due to compensation of neutron and proton damage: MCZ is under investigation in ATLAS, CMS and LHCb • RD50 results on very highly irradiated silicon strip sensors have shown that planar pixel sensors are a promising option also for the upgrade of the Experiments. • Charge multiplication effect observed for heavily irradiated sensors (diodes and strips). A dedicated R&D effort will be launched in RD50 to understand the underlying multiplication mechanism and optimize the CCE performances. A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -19-

  20. Spares A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -20-

  21. FZ, DOFZ, Cz and MCz Silicon 24 GeV/c proton irradiation (n-type silicon) • Strong differences in Vdep • Standard FZ silicon • Oxygenated FZ (DOFZ) • CZ siliconand MCZ silicon • Strong differences in internalelectric field shape(type inversion, double junction,…) • Different impact on pad and strip detector operation! • e.g.: a lower Vdep or |Neff| does not necessarily correspond to a higher CCE for strip detectors (see later)! • Common to all materials (after hadron irradiation): • reverse current increase • increase of trapping (electrons and holes) within ~ 20% A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -21-

  22. no reverse annealing in CCE measurementsfor neutron and proton irradiated detectors n-in-p microstrip detectors • n-in-p microstrip p-type FZ detectors (Micron, 280 or 300mm thick, 80mm pitch, 18mm implant ) • Detectors read-out with 40MHz (SCT 128A) Signal(103 electrons) Fluence(1014 neq/cm2) [G.Casse, RD50 Workshop, June 2008] • CCE: ~7300e (~30%) after ~ 11016cm-2 800V • n-in-p sensors are strongly considered for ATLAS upgrade(previously p-in-n used) A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -22-

  23. Charge Multiplication –FZ strip sensors • CCE increases at SLHC fluences over the expectations at high fluences • CCE>100%  charge multiplication! • Micron n-on-p FZ strip detectors • Read-out with SCT128A, 25 ns shaping • Multiplication effect more relevant for thin (140 mm) FZ structures at higher fluences: after heavy irradiation it is possible to recover the full ionized charge • For pixel layers this has the potential benefit of reducing the radiation length of the detector and yield a safer S/N 300 mm [G. Casse, 14th RD50 Workshop, June 2009] [I. Mandic et al., NIM A603 (2009) 263 ]

  24. TEOS Poly p+ n- Junction 10mm Processing of Double-Column 3D detectors 1. CNM Barcelona ( 2 wafers fabricated in Nov. 2007) • Double side processing with holes not all the way through • n-type bulk • bump bond 1 wafer to Medipix2 chips • Further production (n and p-type) • First tests on irradiated devices performed ( CNM devices, strip sensors, 90Sr , Beetle chip, 5x1015neq/cm2 with reactor neutrons) : 12800 electrons 2. FBK (IRST-Trento) • very similar design to CNM • 2 batches produced (n-type and p-type ) A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -24-

  25. 2008 test beam with 3D sensors • Two microstrip 3D DDTC detectors tested in testbeam (CMS/RD50) • One produced by CNM (Barcelona), studied by Glasgow • One produced by FBK-IRST (Trento), studied by Freiburg [M.Koehler 13th RD50 Workshop, Nov.2008] A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -25-

  26. 3D-DTC sensors –Test-beam data A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -26-

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