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TEORI DASAR HUBUNGAN SEMIKONDUKTOR

TEORI DASAR HUBUNGAN SEMIKONDUKTOR. Hamzah Afandi, Antonius Irianto dan Betty Savitri Source: Millman, Jacob, Grabel, Arvin, Microelectronics, Mc. Graw Hill Int. Ed., 1994. Robert Boylestad, Louis Nashelsky Sixth Edition; Prentice Hall,1997. Review: Semiconductor Properties Variation.

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TEORI DASAR HUBUNGAN SEMIKONDUKTOR

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  1. TEORI DASAR HUBUNGAN SEMIKONDUKTOR Hamzah Afandi, Antonius Irianto dan Betty Savitri Source: Millman, Jacob, Grabel, Arvin, Microelectronics, Mc. Graw Hill Int. Ed., 1994. Robert Boylestad, Louis Nashelsky Sixth Edition; Prentice Hall,1997.

  2. Review: Semiconductor Properties Variation • Intrisic Concentration vs Temperature: • Mobility vs Temperature: ; mn=2.5, mp=2.7 (100<T<400K) • Mobility vs Electric Field intensity: ~ 107 cm/s 103 V/cm 104 V/cm

  3. Review: Currents in semiconductor • Drift Current: Drill: Calculate the conductivity of an extrinsic semiconductor with donor atom’s concentration of 1016 atom/cm3 (at 300K)!

  4. REVIEW: The Physics of ElectronicsCarrier’s Concentration in extrinsic Semiconductor Mass-Action Law pn = ni2 Charge Density should maintain electric neutrality of crystal For n-type semiconductor, NA = 0; thus: For p-type semiconductor, ND = 0; thus:

  5. Review: Currents in semiconductor Jp • Diffusion Current: Einstein Relationship between D and  Concentration p(x0) p(x1) x0 x x1 Dp= Diffusion Constant of Carrier

  6. Review: Currents in semiconductor  Jp • Total Current: Concentration p(x0) p(x1) x0 x1 x

  7. V21 p1 p2 Concentration p(x1) p(x2) x x1 x2 Review: Graded semiconductor Jp = 0; in open circuited steady state condition

  8. pn JUNCTION DIODE Hamzah Afandi, Antonius Irianto dan Betty Savitri Source: Millman, Jacob, Grabel, Arvin, Microelectronics, Mc. Graw Hill Int. Ed., 1994.

  9. Open Circuited Junction neutral neutral Semiconductors Semiconductors Holes Electrons p type n type

  10. Junction Depletion Region Space Charged Region Open Circuited JunctionJunction Formation p type n type

  11. Depletion Region Space Charged Region Open Circuited JunctionJunction Formation Charge Density (V) Wn -Wp p type n type

  12. Depletion Region Space Charged Region Open Circuited JunctionJunction Formation Wn -Wp Field Intensity () p type n type

  13. V0 Depletion Region Space Charged Region Open Circuited JunctionJunction Formation Wn -Wp V = 0 Electrostatic Potential (V) p type n type

  14. V0 Depletion Region Space Charged Region Open Circuited JunctionJunction Formation Potential Barrier of electrons(V) Wn -Wp V = 0 p type n type

  15. Depletion Region Space Charged Region Closed Circuited JunctionForward Biased pn Junction p type n type

  16. Depletion Region Space Charged Region Closed Circuited JunctionForward Biased pn Junction p type n type

  17. Depletion Region Space Charged Region Closed Circuited JunctionReverse Biased pn Junction p type n type

  18. Depletion Region Space Charged Region Closed Circuited JunctionReverse Biased pn Junction p type n type

  19. Depletion Region Space Charged Region Closed Circuited JunctionReverse Biased pn Junction p type n type

  20. VOLT-AMPERE CHARACTERISTIC  = 2 (Si)  = 1.5 (Ge) ID V VD -VZ IS (A Scale) Cut-in Offest Turn-on Breakdown

  21. R + ID + VAA VD _ _ Diode Circuit Analysis: Load-Line Concept ID VAA /R Solve for: VAA = 3 V R = 2 K IDQ Q VD VAA VDQ

  22. CALCULATIONEXAMPLES Given in class

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