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J.P. Balbuena, G. Pellegrini, R. Bates, C. Fleta, M. Lozano, M. Ullán

J.P. Balbuena, G. Pellegrini, R. Bates, C. Fleta, M. Lozano, M. Ullán Semiconductor radiation detectors group Institut de Microelectrònica de Barcelona Centre Nacional de Microelectrònica - CSIC Spain 3rd March 2011. Simulations of 3D-DDTC Silicon detectors.

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J.P. Balbuena, G. Pellegrini, R. Bates, C. Fleta, M. Lozano, M. Ullán

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  1. J.P. Balbuena, G. Pellegrini, R. Bates, C. Fleta, M. Lozano, M. Ullán Semiconductor radiation detectors group Institut de Microelectrònica de Barcelona Centre Nacional de Microelectrònica - CSIC Spain 3rd March 2011 Simulations of 3D-DDTC Silicon detectors

  2. Blocks Columns Increments Transitions Hypertext 1Motivation 2Simulation: Layout and parameters 3Simulation: Electric field 4 Simulation: Charge multiplication 5 Conclusions/Future work

  3. Blocks Columns Increments Transitions Hypertext 1Motivation 2 Simulation: Layout and parameters 3 Simulation: Electric field 4 Simulation: Charge multiplication 5 Conclusions/Future work

  4. 3D-DDTC measurements Irradiated 3D detectors present Charge multiplication effect: Objective Develop 3D detectors with Charge multiplication effect for low Bias voltages before irradiation by changing the bulk doping concentration. • above 150V for p-type • above 260V for n-type [M. Köhler, University of Freiburg, Germany]

  5. Blocks Columns Increments Transitions Hypertext 1 Motivation 2Simulation: Layout and parameters 3 Simulation: Electric field 4 Simulation: Charge multiplication 5 Conclusions/Future work

  6. Geometry • - pitch: 80 µm • wafer thickness: 285 µm • column depth: 250 µm • column diameter: 10 µm Doping levels • - n+ columns: 1019 cm-3 • p+ columns: 1019 cm-3 • p-stop: 1018 cm-3 • Si/SiO2 charge: 5·1011 cm-2 P-type p+ p+ n+ p+ p+

  7. Geometry • - pitch: 80 µm • wafer thickness: 285 µm • column depth: 250 µm • column diameter: 10 µm Doping levels • - n+ columns: 1019 cm-3 • p+ columns: 1019 cm-3 • Si/SiO2 charge: 5·1011 cm-2 N-type n+ n+ p+ n+ n+

  8. [M. Benoit, Laboratoire de l’accélérateur linéar (LAL), Orsay, France]

  9. Blocks Columns Increments Transitions Hypertext 1 Motivation 2 Simulation: Layout and parameters 3Simulation: Electric field 4 Simulation: Charge multiplication 5 Conclusions/Future work

  10. Electric Field (p-type) n+ p+

  11. Electric Field (n-type) p+ n+

  12. Using PowerPointto Typeset Nice Presentations Blocks Columns Increments Transitions Hypertext 1 Motivation 2 Simulation: Layout and parameters 3 Simulation: Electric field 4Simulation: Charge multiplication 5 Conclusions/Future work

  13. Charge multiplication Compromise between low full depletion voltages and high enough voltages for Charge multiplication V = 150 V for both n and p-type ρn = 100 Ω·cm ρp = 200 Ω·cm MIP 22800 electrons Charge multiplication

  14. Charge multiplication in the irradiated 3D model Doping concentration: Neff = 7·1011 cm-3 (p-type) Fluence: Φeq = 2·1015 neq/cm2 Electric field compatible with Charge multiplication for 250V Unexpected reduction of the charge collected for 250V !! Interface charge: Qox = 5·1011 cm-2

  15. Using PowerPointto Typeset Nice Presentations Blocks Columns Increments Transitions Hypertext 1 Motivation 2 Simulation: Layout and parameters 3 Simulation: Electric field 4 Simulation: Charge multiplication 5 Conclusions/Future work

  16. Conclusions • Obtained charge multiplication effect in both n and p-type substrates without irradiation Future work • Complete the study on multiplication effect for different doping levels at different biasing voltages • Solve problems of charge multiplication in the irradiated 3D model.

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