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Phase Transistions in Ni-Si System With Ti Diffusion Boundary Layer

Phase Transistions in Ni-Si System With Ti Diffusion Boundary Layer. Andrew Smith Advisor: Prof. Kvam University of Purdue, REU Summer Program. Overview. Objectives Approach Observations Findings Future work. Objectives. To study effects of Ti interlayer on Ni-Si system. Approach.

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Phase Transistions in Ni-Si System With Ti Diffusion Boundary Layer

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  1. Phase Transistions in Ni-Si System With Ti Diffusion Boundary Layer Andrew Smith Advisor: Prof. Kvam University of Purdue, REU Summer Program

  2. Overview • Objectives • Approach • Observations • Findings • Future work

  3. Objectives • To study effects of Ti interlayer on Ni-Si system

  4. Approach • Anneal samples • 350oC • 500oC • 650oC • 800oC • Analyze annealed samples using XRD

  5. Observations • False peak- Tungsten contamination • Similar results for 500oC and 650oC • Inconclusive findings for 800oC

  6. Findings • 350oC • Formation of Ni2Si after 90min • No conclusive NiSi growth at this temperature • 500oC • Formation of NiSi • Appearance of Ni3Si2, Ni3Si

  7. More Findings • 650oC • Similar to 500oC results • Check higher temperature • 800oC • Uncertain peak with six possibilities • Best guess- NiSi2

  8. Interpretation • Pathway similar to previous work • How is Ti layer affecting the system? • Slows down process

  9. Future Work • Further analysis of 800oC • Control XRD machine variables • Different techniques to verify guesses • Develop NiSi2-Si system • Measure electrical properties • Compare with current MESFETs

  10. Thanks • Prof Kvam • REU Students • REU Program

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