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Scientific Achievement

Ultrathin hexagonal boron nitride coatings impart exceptional oxidation-resistance at temperatures up to 1100°C. 2mm. c. d. 0.2nm. 0.2nm. (a) Photo of the as-grown h-BN on a Ni foil. (b) Optical image of few h-BN layers.

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Scientific Achievement

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  1. Ultrathin hexagonal boron nitride coatings impart exceptional oxidation-resistance at temperatures up to 1100°C 2mm c d 0.2nm 0.2nm (a) Photo of the as-grown h-BN on a Ni foil. (b) Optical image of fewh-BN layers. (c)-(d) STEM images showing double and single layer h-BN, respectively. Work performed at Rice University and as part of a user project at ORNL’s Shared Research Equipment (ShaRE) User Facility, which is now part of the Center for Nanophase Materials Sciences (CNMS). Collaborators include Vanderbilt University, Agilent Technologies, University of Texas – Austin, and the National University of Singapore. Z. Liu, Y. Gong, W. Zhou, L. Ma, J. Yu, J. C. Idrobo, J. Jung, A. H. MacDonald, R. Vajtai, J. Lou, and P. M. Ajayan, “Ultrathin High-temperature Oxidation-resistant Coatings of Hexagonal Boron Nitride,” Nature Communications(2013) DOI: 10:1038/ncomms3541. Scientific Achievement Demonstrate that atomically layered hexagonal boron nitride (h-BN) offers excellent oxidation protection, and are suitable as ideal ultrathin coating material. The thicknesses of these atomically layered h-BN can be controlled from double-layer to bulk, working as excellent passivation coatings at temperatures up to 1,100 °C in oxygen-rich atmospheres. Significance and Impact These ultrathin h-BN coatings should find exciting applications as protective layers for thin metal films, graphene, and transition metal dichalcogenides electronics under extreme conditions. Research Details • Low-pressure chemical vapor deposition (CVD) was used to synthesize large-scale and highly crystalline atomically layered h-BN films • Oxidation dynamics were studied up to 1100 °C via X-ray photoelectron spectroscopy. • Scanning transmission electron microscopy (STEM), optical imaging, atomic force microscopy, Raman spectroscopy, and scanning electron microscopy techniques were used to characterize the quality of the h-BN.

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