Mid-Voltage Power MOSFETs in PQFN Package Utilizing Copper Clip Technology

1. PRESS RELEASE Mid-Voltage Power MOSFETs in PQFN Package Utilizing Copper Clip Technology DATA SHEETS HI-RES GRAPHIC The new power MOSFETs featuring IR’s latest silicon technology are designed for switching applications including DC to DC converters for network and telecom equipment, AC-DC SMPS, and motor drive switches. Available in a wide range of voltages from 40 V to 250 V, the devices provide various levels of on-state resistance and gate charge to offer customers optimized performance and cost for a given application. MOSFET HOME PAGE • Features • Low thermal resistance to PCB (down to <0.5 C/W) results in increased power density • 100% RG tested results in increased reliability • Low profile (<0.9 mm) results in increased power density • Industry-standard pinout results in multi-vendor compatibility • Compatible with existing surface mount techniques results in easier manufacturing • RoHS compliant makes these devices environmentally friendly • MSL1 industrial qualification results in increased reliability • Advantages • With a low 0.9 mm profile and industry standard pin out, the devices’ high current rating and low RDS(on) enable higher efficiency, power density and reliability compared to alternative solutions requiring multiple parallel parts, making them well suited to switching applications where board space is limited. • Copper clip lowers the package resistance by around 1mOhm. This feature is especially important because new silicon technologies reach sub 1mOhm performance. Reducing the package resistance reduces the overall product resistance. • The copper clip allows industrial qualification to be granted because the die is soldered on the lead frame. • The copper clip allows the package to handle more current allowing the die to be the limiting factor instead of the package. June 2010