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Conclusion

Conclusion. The simulation results show that the InGaN / InGaN LED has better performance over its conventional InGaN / GaN counterpart due to the enhancement of electron confinement , the reduced polarization effect between the barrier and well.

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Conclusion

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  1. Conclusion • The simulation results show that the InGaN/InGaN LED has better performance over its conventional InGaN/GaN counterpart due to the enhancement of electron confinement, the reduced polarization effect between the barrier and well. • The simulation results also suggest that the efficiency droop is markedly improved when the traditional GaN barriers are replaced by InGaN barriers. 10

  2. References • 「電子洩露」現象是LED燈泡光效下降的罪魁禍首?LED inside(2013/08/01) • J. Xu, M. F. Schubert, A. N. Noemaun, D. Zhu, J. K. Kim, E. F. Schubert,M. H. Kim, H. J. Chung, S. Yoon, C. Sone, and Y. Park, Appl. Phys. Lett.94, 011113 2009.t • M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett. 91, 183507 2007 • M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S.M. Lee, C. Sone, T. Sakong, and Y. Park, Appl. Phys. Lett. 93, 041102 2008 . 11

  3. Thank you for your attention! 12

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