1 / 2

2009 PIDS Chapter Updates Logic Ring-oscillator delay added. Fan-out = 1 and 4.

2009 PIDS Chapter Updates Logic Ring-oscillator delay added. Fan-out = 1 and 4. I sat of p -MOSFET added. Other parameters assumed symmetric. Subthreshold currents held constant independent of L gate /year. HP, LOP, LSTP = 100 nA / m m, 5 nA / m m, 50 pA / m m respectively.

bruno
Download Presentation

2009 PIDS Chapter Updates Logic Ring-oscillator delay added. Fan-out = 1 and 4.

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. 2009 PIDS Chapter Updates Logic • Ring-oscillator delay added. Fan-out = 1 and 4. • Isatof p-MOSFET added. Other parameters assumed symmetric. • Subthreshold currents held constant independent of Lgate/year.HP, LOP, LSTP = 100 nA/mm, 5 nA/mm, 50 pA/mm respectively. • Criterion for S/D parasitic resistance set for degradation of 33%. DRAM • Small cell factor–4F2 introduced in 2011. • DRAM product size 1 yr delay from ITRS 2007/2008 (4 Gb in 2011). NVM • Floating-gate to charge-trapping NAND flash transition in 2012, delay 2 yr. • 3 bit/cell – 4bit/cell transition delays 2 years, to 2012. • 3-D charge-trapping flash in 2014, delay 1 year. • STT (spin-torque-transfer) MRAM added. Reliability • Major revisions in the reliability requirement specifications.

  2. 2009 Update: Nonvolatile Memory • NAND flash: • Half-pitch pulled-in 1 year from 2007/2008 Editions.

More Related