1 / 12

GaN LED with Ion Implanted Cold Zone

GaN LED with Ion Implanted Cold Zone. 班級 : 碩研電子二甲 姓名 : 陳詠升 授課教師 : 蔣富成. Device Fabrication. ICP-RIE. grown by MOCVD. Ni. Ni. P-GaN 0.16um. MQW 5 periods of InGaN/GaN. N-GaN 2um. Undope GaN. Sapphire. Schematic Sketch of the Fabricated. Status: Ion Energy : 180 keV

candy
Download Presentation

GaN LED with Ion Implanted Cold Zone

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. GaN LED with Ion Implanted Cold Zone 班級:碩研電子二甲 姓名:陳詠升 授課教師:蔣富成

  2. Device Fabrication ICP-RIE grown by MOCVD Ni Ni P-GaN 0.16um MQW 5 periods of InGaN/GaN N-GaN 2um Undope GaN Sapphire

  3. Schematic Sketch of the Fabricated Status: Ion Energy : 180 keV Concentration : 1.5x1013 cm-3 Selective Area Activation N2 ambient 750°C for 30 min Si ion implantation Ni Ni-mask Ni ITO Ni Ni P-GaN CBL

  4. The Microscopic Image 300X300um2

  5. Compare with Conventional LED L conventional R = (L *ρ)/A L ion implantation

  6. I-V Characteristic 6.7V 7.1V

  7. Forward Voltage-Temperature

  8. Heat generated can be dissipated into the ion-implanted cold zone Junction Temperature-Injection Current Density 37° →60.6° 34.8 ° →39°

  9. Due to a smaller effective light emitting area

  10. Conclusion 1. Vf of ion implanted LED is slightly lower than that of conventional LED。 Advantage: 2. Re-distribution of carrier and temperature enhances efficient light emission。 3. Efficient heat transfer to the ion implanted cold zone。 4. Reduce internal temperature to improve the reliability 。

  11. Reference • 1. Yun-Wei Cheng, Hung-Hsien Chen, Min-Yung Ke, Cheng-Pin Chen, Jian Jang Huang “Effect of selective ion-implanted p-GaN on the junction temperature of GaN-based light emitting diodes” Optics Communications, Volume 282, Issue 5, 1 March 2009, Pages 835-838 • 2. Lin, R.-M.; Jen-Chih Li; Yi-Lun Chou; Kuo-Hsing Chen; Yung-Hsiang Lin; Yuan-Chieh Lu; Meng-Chyi Wu; Hung, H.; Wei-Chi Lai, “Improving the Luminescence of InGaN–GaN Blue LEDs Through Selective Ring-Region Activation of the Mg-Doped GaN Layer, ” Photonics Technology Letter, IEEE Vol.19 June 15, 2007 Page:928-930. • 3. M.A. Tsai, P. Yu, J.R. Chen, J.K. Huang, C.H. Chiu, H.C. Kuo, T.C. Lu, S.H. Lin, S.C. Wang, “Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg+ Implanted Current Blocking Layer ” Photonics Technology Letters, IEEE Volume 21, Issue 11, June1, 2009 Page(s):688 – 690

More Related