Electronic and Photonic Device Applications for Narrow Gap Semiconductors

1. Electronic and Photonic Device Applications for Narrow Gap Semiconductors Matthew B. Johnson, University of Oklahoma Norman Campus, DMR 0520550 Semiconductors with narrow energy gaps have properties that are advantageous for electronic and photonic devices. CSPIN works with Intel Corp. and Amethyst Research Inc. (ARI) on research related to these applications. With Intel and other university collaborators, we are studying InGaAs/InAlAs epilayers for integration with high-k dielectrics. With ARI, we are studying the integration of InSb epilayers with Ge-on-Insulator (GeOI) substrates. In such structures, the semiconductor with the highest electron mobility (InSb) is integrated with the semiconductor with the highest hole mobility (Ge). InSb: 2.0 µm InSb: 2 µm <110> AlSb: 100 nm ‘(31)’ Ge: 2 ~ 4 nm SiO2 (amorphous) Si(001) substrate The RHEED pattern for an InSb layer grown on a GeOI substrate shows a clear surface reconstruction in spite of the very thin Ge layer. The x-ray diffraction peak is as narrow as for a growth on a Ge substrate.