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Silicon On Insulator (SOI) transistor TEG の照射前後の測定

Silicon On Insulator (SOI) transistor TEG の照射前後の測定. L=0.30 W=600. L=0.50(um) W=1000. L=0.15 W=300. L=0.30 W=600. L=0.50 W=1000. gate0. gate3. gate6. Vds =Vd - Vs Vgs = Vg - Vs. Vd 、 Id. Vs. Vds. Vg. Vgs. Transistor のパラメータ. Vg の値が変化すると Vs の値も変化してしまう. H06_6 float と B.T の違い.

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Silicon On Insulator (SOI) transistor TEG の照射前後の測定

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  1. Silicon On Insulator (SOI)transistor TEGの照射前後の測定 L=0.30 W=600 L=0.50(um) W=1000 L=0.15 W=300 L=0.30 W=600 L=0.50 W=1000 gate0 gate3 gate6

  2. Vds =Vd - Vs Vgs = Vg - Vs Vd、Id Vs Vds Vg Vgs Transistorのパラメータ Vgの値が変化するとVsの値も変化してしまう

  3. H06_6 floatとB.Tの違い <float> <B.T> PMOSgate0 PMOSgate3

  4. <float> <B.T> PMOS gate6 NMOS gate0

  5. PMOS Low VtL=0.15(um),W=300(um) nonirrad sample

  6. PMOS Low VtL=0.30,W=600

  7. PMOS High VtL=0.15,W=300<float>

  8. PMOS IOL=0.30,W=600

  9. NMOS Low VtL=0.15(um),W=300(um)

  10. NMOS High VtL=0.15,W=300

  11. NMOS IOL=0.30,W=600

  12. back up

  13. NMOS gate3 NMOS gate6

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