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ФИЗИКО-ХИМИЧЕСКИЕ ОСНОВЫ НАНОТЕХНОЛОГИИ. Профессор Н.Г. Рамбиди. 5. Атомный дизайн. What is Scanning Tunneling Microscopy?. Allows for the imaging of the surfaces of metals and semiconductors at the atomic level.
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ФИЗИКО-ХИМИЧЕСКИЕ ОСНОВЫ НАНОТЕХНОЛОГИИ Профессор Н.Г. Рамбиди
What is Scanning Tunneling Microscopy? Allows for the imaging of the surfaces of metals and semiconductors at the atomic level. Developed by Gerd Binnig and Heinrich Rohrer at the IBM Zurich Research Laboratory in 1982. Binnig Rohrer The two shared half of the 1986 Nobel Prize in physics for developing STM. STM has fathered a host of new atomic probe techniques: Atomic Force Microscopy, Scanning Tunneling Spectroscopy, Magnetic Force Microscopy, Scanning Acoustic Microscopy, etc.
e- piezo-element e- e- e- nA e- < 1nm e- e- R e- e- STM: scanning tunneling microscope tunneling of electrons through air between probe and surface probe x-y stage only conducting material
Basic Principles of STM Bias voltage: mV – V range d ~ 6 Å Electrons tunnel between the tip and sample, a small current I is generated (10 pA to 1 nA). I proportional to e-2κd, I decreases by a factor of 10 when d is increased by 1 Å.
Usually, constant current mode is superior. Two Modes of Scanning Constant Height Mode Constant Current Mode
Examples of STM images… • Pt (100) with vaccancies • Si (111) 7x7 reconstruction • Annealed decanethiol film on Au(111) • Si (111) with terraces and vaccancies
Создание треугольной системы атомов