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Basic characteristic of １００ μ ｍＧＥＭ

Basic characteristic of １００ μ ｍＧＥＭ. K,Kadomatsu （ saga.u) 池野正弘、宇野彰二、 内田智久 、氏家宣彦、関本美智子、 田中秀治、 田中真伸、仲吉一男、村上武（ KEK) 青座篤史、杉山晃（佐賀大） 中野英一、中川伸介（大阪市大） 杉山史憲（東京理科大）. Motivation. We want to get high gain. To understand a basic characteristic of 100 m mGEM.

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Basic characteristic of １００ μ ｍＧＥＭ

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  1. Basic characteristic of１００μｍＧＥＭ K,Kadomatsu （saga.u) 池野正弘、宇野彰二、内田智久、氏家宣彦、関本美智子、 田中秀治、田中真伸、仲吉一男、村上武（KEK) 青座篤史、杉山晃（佐賀大） 中野英一、中川伸介（大阪市大） 杉山史憲（東京理科大）

  2. Motivation We want to get high gain • To understand a basic characteristic of 100 mmGEM. • We inspect that 100 mmGEM can provide higher gain than 50 mmGEM.

  3. 5 μm 8 μm Polyimide Polyimide Cu Cu 50 μm 100μm 5 μm 8 μm GEM Foil φ = 70μm 10cm 140 μm 10cm Scienergy Co., Ltd. 製

  4. 1mm Single 100mm-GEM Test Chamber PCB GAS Ar-CO2(70/30) □15mm×15mm 36＝6×6 ED=0.75kv/cm EI=7kv/cm 55Fe (5.9 keV X-ray) Drift Plate 2ｍｍ Drift Area→ED 100mm-GEM1 2200pF Read out 2ｍｍ Induction Area →EI PCB Read out 2200pF

  5. Single GEM ΔＶＧＥＭ もう少し、高い電圧を掛けれるようにしたい Higher Gain is obtained with 100μmGEM We normalize ΔVGEM of 100μmGEM to Δ VGEM of 50μmGEM

  6. 100mmGEM ΔVGEM=660V EI=6.0kV/cm Ehole=61.9kV/cm 50mmGEM ΔVGEM=350V EI=7.0kV/cm Ehole=47.5kV/cm Single GEMED dependence ・AAHEN　測定 ・

  7. 100mmGEM ΔVGEM=660V ED=0.76kV/cm Ehole=61.9kV/cm 50mmGEM ΔVGEM=350V ED=0.5kV/cm Ehole=47.5kV/cm Single GEM EI dependence ・AAHEN　測定

  8. EI dependenceHigh Electric field ED=0.75kV/cm ΔVGEM=640V ED=0.75kV/cm ΔVGEM=660V ED=0.75kV/cm ΔVGEM=620V

  9. Double GEM Test Chamber 0.75kV/cm Drift 2.0 mm ET 2.0 mm Transfer 7.0kV/cm 2.0 mm Induction

  10. Double GEM, 100μm ET dependence ΔVGEM=500V ED=0.75kV/cm EI=7.0kV/cm

  11. Double GEMΔVＧＥＭ 高Gainを得たい We were not able to apply the high voltage to ΔVGEM

  12. Now • Electric field @ Hole center • １００μｍＧＥＭ：６１．９kV/cm (Maxwell 3D) • ５０μｍＧＥＭ：４７．５kV/cm (Maxwell 3D) • Single GEM Max high Voltage→Δ VGEM:660V • Double GEM Max high Voltage→ Δ VGEM:540V • It is easy to discharge in Double GEM. • The second layer GEM discharges due to large number of electrons produced at the First layer GEM

  13. Ｗｅ change a diameter of GEM hole.70μｍφ→９０μｍφ Drift Plate（Mesh） ２ｍｍ 100μGEM（90φ） ２ｍｍ

  14. 70Φ 90Φ ED=1.5kV/cm EI=6.0kV/cm Ehole=61.9kV/cm ED=1.5kV/cm EI=6.0kV/cm Ehole=58.0kV/cm Single GEM ΔＶＧＥＭ

  15. ED dependence90Φ VS 70Φ 70Φ 90Φ ΔVGEM=660V EI=6.0kV/cm Ehole=61.9kV/cm ΔVGEM=660V EI=6.0kV/cm Ehole=58.0kV/cm

  16. EI dependence90Φ VS 70Φ 70Φ 90Φ ΔVGEM=660V ED=0.76kV/cm Ehole=61.9kV/cm ΔVGEM=660V ED=0.76kV/cm Ehole=58.0kV/cm

  17. Summary • 100μmGEM • We have measured the basic characteristic. • A Higher Gain can be got with 100 mm-Single GEM than that with 50 mm-Double GEM . But the gain is not so high as that with 50 mm-Triple GEM • A diameter of a GEM hole. • We changed a diameter of a GEM hole to 90μm φ from 70μm φ • We can apply higher ΔVGEM . • We can get 2times larger gain. • Electric field @ Hole center • ７０μｍφ：６１．９kV/cm • ９０μｍφ：５８．０kV/cm

  18. Normal Damaged Recycle GEM • We try to revitalize the GEM which discharges. There is burnt area Zoom Dead GEM

  19. Soft etching 東海電子工業株式会社の方でエッジングを行った。 １～３％の塩酸水溶液に浸ける エッジング マシン ８０℃で６時間 　　　乾燥 ５０ｃｍ/分のスピードでエッジングされる

  20. Reprocessing • Soft etching • Etching time is shorter than usual chemical etching. • Plasma etching • An etching effect is stronger than chemical etching. • Dead GEMs, which can not be recovered by soft etching , are regenerated by Plasma etching. Recovery of GEM is basically possible • About 90% of Dead GEMs can be recovered by Soft or Plasma etching .

  21. 10000 1000 100 こちらを見てください 10 250300 350 400 450 500 550 600 650 700 750 ΔVgem

  22. ED dependence90Φ VS 70Φ ΔVgem=660V Ei=6.0kv/cm

  23. EI dependence90Φ ,V,S 70Φ Ed=1.5kv/cm ΔVgem=660V

  24. ＥＤ 100mmGEM ΔVGEM=660V EI=6.0kV/cm Ehole=61.9kV/cm 50mmGEM ΔVGEM=350V EI=7.0kV/cm Ehole=47.5kV/cm

  25. ＥＩ

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