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Lecture 12

Lecture 12. OUTLINE pn Junction Diodes (cont’d) Deviations from the ideal I-V R-G current series resistance high-level injection Reading : Pierret 6.2. Deviations from the Ideal I-V. R. F. Pierret , Semiconductor Device Fundamentals , Figure 6.10. Reverse-Bias Current

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Lecture 12

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  1. Lecture 12 OUTLINE • pn Junction Diodes (cont’d) • Deviations from the ideal I-V • R-G current • series resistance • high-level injection Reading: Pierret 6.2

  2. Deviations from the Ideal I-V R. F. Pierret, Semiconductor Device Fundamentals, Figure 6.10 Reverse-Bias Current (linear scale) Forward-Bias Current (log scale) Ideally, Ideally, EE130/230A Fall 2013 Lecture 12, Slide 2

  3. Effect of R-G in Depletion Region • The net generation rate is given by • R-G in the depletion region contributes an additional component of diode current IR-G: EE130/230A Fall 2013 Lecture 12, Slide 3

  4. Net Generation in Reverse Bias R. F. Pierret, Semiconductor Device Fundamentals, Figure 6.15(a) • For reverse bias greater than several kT/q, EE130/230A Fall 2013 Lecture 12, Slide 4

  5. Net Recombination in Forward Bias R. F. Pierret, Semiconductor Device Fundamentals, Figure 6.15(b) • For forward bias: EE130/230A Fall 2013 Lecture 12, Slide 5

  6. High-Level Injection (HLI) Effect • As VA increases, the side of the junction which is more lightly doped will eventually reach HLI: • significant gradient in majority-carrier profile Majority-carrier diffusion current reduces the diode current from the ideal case. nn > nno for a p+n junction or pp > ppo for a pn+ junction R. F. Pierret, Semiconductor Device Fundamentals, Figure 6.17(a) EE130/230A Fall 2013 Lecture 12, Slide 6

  7. Effect of Series Resistance R. F. Pierret, Semiconductor Device Fundamentals, Figure 6.16 EE130/230A Fall 2013 Lecture 12, Slide 7

  8. Summary: Deviations from Ideal I-V • At large forward biases (high current densities) D: high-level injection E: series resistance limit increases in current with increasing forward bias voltage. B: Excess current under reverse bias is due to net generation in the depletion region. C: Excess current under small forward bias is due to net recombination in the depletion region. A: At large reverse biases (high E-field), large reverse current flows due to avalanching and/or tunneling R. F. Pierret, Semiconductor Device Fundamentals, Figure E6-9 EE130/230A Fall 2013 Lecture 12, Slide 8

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