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RIE/ICP=30/1500 W

RIE/ICP=30/1500 W. RIE/ICP=50/1500 W. 36.8 um in 10min. 33.1 um in 10min. RIE/ICP=70/1500 W. RIE/ICP=100/1500 W. 37.4 um in 10min. 35.7 um in 10min. Other parameters are fixed as: Temperature 15’C, P ressure =30mTorr, SF6=80sccm, Ar =10sccm, Time=10min. RIE/ICP=70/1500 W for 24min.

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RIE/ICP=30/1500 W

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  1. RIE/ICP=30/1500W RIE/ICP=50/1500W 36.8umin10min 33.1umin10min RIE/ICP=70/1500W RIE/ICP=100/1500W 37.4umin10min 35.7umin10min Otherparametersarefixedas: Temperature15’C,Pressure=30mTorr,SF6=80sccm,Ar=10sccm,Time=10min

  2. RIE/ICP=70/1500Wfor 24min RIE/ICP=100/1500Wfor 26min • Inbothofthese cases, the Ni was not fully attacked even after enough long time to remove all the Si. • The color difference comes from the microscope contrast adjustment, but not the etching itself.

  3. RIE/ICP Si NiSix Ni Ti/Pd/Ti sapphire

  4. Si NiSix Ni Ni Ti/Ni/Ti sapphire Ti/Ni/Ti/Ni = 30/350/30/50 nm Overlap = 870 nm

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