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Impact of Complex Material Systems on the Radiation Response of Advanced Semiconductors

Impact of Complex Material Systems on the Radiation Response of Advanced Semiconductors. Robert A. Reed Institute for Space and Defense Electronics School of Engineering Vanderbilt University. Overview. Introduction Identifying Key Issues Research Program Background Technical Objectives

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Impact of Complex Material Systems on the Radiation Response of Advanced Semiconductors

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  1. Impact of Complex Material Systems on the Radiation Response of Advanced Semiconductors Robert A. Reed Institute for Space and Defense Electronics School of Engineering Vanderbilt University

  2. Overview • Introduction • Identifying Key Issues • Research Program Background • Technical Objectives • Approach • Expected Research Results • Technology Transfer

  3. Introduction • Today’s integrated circuits arefabricated using complex materialsystems • Multi-layer, planar copper metal traces • Tungsten interconnection • High-k dielectrics • Goal of this work: • Advance the state-of-knowledge pertaining to the impact of complex material systems on the radiation response of sub-100 nm semiconductor structures

  4. Key Issues • Two key areas of research: • Basic mechanisms for single event effects (SEEs) • Increased absorbed dose via dose enhancement (DE)

  5. SEEs: Background • Physical mechanisms for SEEs • Ionizing radiation-induced energy deposition within the semiconductor, • Initial electron-hole pair generation, recombination and thermalization, • Carrier transport within the semiconductor, • The response of the device and circuitto the motion of the electron-hole pair distribution. • The goal of the proposed SEE work is to develop an understanding of the impact that complex material systems have on the first three mechanisms • Nuclear Reactions • Carrier Generation and motion

  6. Nuclear Reactions:Background • Ion-Ion nuclear reactions in non-silicon material near the sensitive volume contribute to the soft error response Warren et al. 2005, Dodd et al., TNS 2007, Reed et al. TNS 2007

  7. Nuclear Reactions • Technical Objectives: • Measurement of energy deposition from reactions • Approach: Shaping Amplifier Multi-Channel Analyzer Charge Sensitive Amplifier Device Under Test COUNTS ENERGY (KeV)

  8. Nuclear Reactions • Candidate detectors: • Expected Results: • Identification of critical materials in complex material systems • Provide experimental data for simulation effort define in previous talk • SOI PIN Diode: • Various amounts of metals • Université Catholique de Louvain Photodiode: - Deposit various materials on diode - NASA MSFC and GSFC

  9. Carrier Distribution • Background: Simulation of delta ray production using MC code from SOREQ MRED simulation of delta ray production for 100 MeV protons • Technical Objectives: • Experimental study of carrier generation and comparison to theories • Review carrier motion theories

  10. Carrier Generation Array of SOI collection volumes • Approach: • Build stacked array of detectors • VU space awarded on DARPA 3D SOI run • Measure response • Compute energy deposition spectra (MRED and SOREQ) • Identify shortcoming of carrier generation theories • Review ultrafast nonlinear-optical techniques to study carrier relaxation processes (NRL) • Expected Results: • Identify shortcoming of carrier generation theories

  11. Free Carrier Motion • Approach: • Review current carrier motion theories • Expected Results: • Identify shortcoming of carrier motion theories

  12. Key Issues • Two key areas of research: • Basic mechanisms for single event effects (SEEs) • Increased absorbed dose via dose enhancement (DE)

  13. Dose Enhancement: Background D. E. Beutler, et al. IEEE Trans. Nucl. Sci., 1987.

  14. Dose Enhancement: Background D. E. Beutler, et al. IEEE Trans. Nucl. Sci., 1987.

  15. Dose Enhancement • Technical Objectives: • Develop and validate simulation methodology for dose enhancement effect • Approach: • Determine simulation methodology for dose enhance effects using MRED • Perform dose enhancement simulations and compare to existing experimental data • Research to extend the dose enhancement simulations to highly • Expected Results • Simulation tool to study DE • Better understanding of the implications of high-Z materials near active devices for advance semiconductors

  16. Summary of Research • Goal: Advance the state-of-knowledge pertaining to the impact of complex material systems on the radiation response of sub-100 nm semiconductor structures

  17. Technology Transfer • ISDE Engineering • Collaborative R&D, e.g. NRL/Vanderbilt • NASA MSFC/Vanderbilt CREME-MC Site • DoD vendor relationships • NASA Center collaborative R&D • Through students

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