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X. Wan , R. Steenwelle, M.D.Nguyen, M. Dekkers, D.H.A. Blank, R.J.M.Vullers and G. Rijnders

X. Wan , R. Steenwelle, M.D.Nguyen, M. Dekkers, D.H.A. Blank, R.J.M.Vullers and G. Rijnders. Piezoelectric Thin Films For Energy Harvesting Devices. Outline. General introduction and motivation Fabrication and characterization

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X. Wan , R. Steenwelle, M.D.Nguyen, M. Dekkers, D.H.A. Blank, R.J.M.Vullers and G. Rijnders

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  1. X. Wan, R. Steenwelle, M.D.Nguyen, M. Dekkers, D.H.A. Blank, R.J.M.Vullers and G. Rijnders Piezoelectric Thin Films For Energy Harvesting Devices

  2. Outline General introduction and motivation Fabrication and characterization Piezoelectric properties of PbZrxTi(1-x)O3 epitaxial thin films Device testing Summary

  3. Harvesting sources Ambient light harvested power Indoor 10 μW/cm2 Outdoor 100 mw/cm2 Thermal energy harvested power Human 30 μW/cm2 Industrial 1-10 mw/cm2 • Electromagnetic • Electrostatic • Piezoelectric Vibration harvested power Human 4 μW/cm2 Industrial 100 μw/cm2 RF harvested power Cell phone 0.1 μW/cm2 *Vullers et al, Micropower Energy Harvesting, Solid-State Electronics 53 (2009) 684–693

  4. Concept (1) (2) • To modify the piezoelectric and ferroelectric properties of PZT thin films. • Relatively lower the dielectric permittivity and dielectric losses. • High piezoelectric coefficient material.

  5. Piezo MEMS Epitaxial PZT thin films with enhanced piezoelectric properties grow on standard Silicon or SOI wafers Compatible with MEMS process, enable production in industry scales. Reduced piezo component size lead to revolutionary high density integration SRO PZT SRO Si wafer

  6. Fabrication and characterization Pulsed laser deposition (PLD) Wet etching BHF (HF 12.5%) Reactive ion etching (Plasma therm 790) Deep reactive ion etching (DRIE) Etc. • X-ray diffraction (XRD) • Scanning Electron Microscope (SEM) • Ferroelectric tester (P-E loop) • Probe station with Keithley semiconductor system • Laser Doppler vibrometer • 4 point bending setup • Etc.

  7. Epitaxial PZT thin film on silicon substrates SRO PZT SRO YSZ Si

  8. PZT on STO PZT on Silicon Piezoelectric properties of PbZrxTi(1-x)O3 epitaxial thin films Stability range of the monoclinic r-phase in epitaxial single-domain PZT films as a function of Zr content. Squares show the calculated positions of two boundaries of the monoclinic gap on the misfit-strain axis at T=25 °C. The dashed line is a guide for the eye. N. A. Pertsev, V. G. Kukhar, H. Kohlstedt, and R. Waser, Phys. Rev. B. 67, 054107 (2003)

  9. Piezoelectric properties of PbZrxTi(1-x)O3 epitaxial thin films

  10. Piezoelectric properties of PbZrxTi(1-x)O3 epitaxial thin films Both dielectric constant and e31 show a maximun value at PbZr0.4Ti0.6O3 thin films. Figure of merit of PbZrxTi(1-x)O3 thin films.

  11. Device testing Photo from R.Elfrink, T.M.Kamel et al. J. Micromech. Microeng. 19 (2009) 094005

  12. Device testing

  13. Summary Epitaxial PZT thin films with various compositions were grown on standard Silicon and SOI wafers A maximum e31,f =20 (±3) C/m2 was achieved in PbZr0.4Ti0.6O3 thin films. Morphotropic phase boundary shifted to Ti-rich in the phase diagram due to the stain relaxation. Relevant devices are fabricated and measured.

  14. Thank you for your attention.

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