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Seminar Paper review. 報告者 : W. C. Jian. Improved performance of 325-nm emission AlGaN ultraviolet light emitting diodes. A. Chitnis, J. P. Zhang, V. Adivarahan, M. Shatalov, S. Wu, R. Pachipulusu, V. Mandavilli, and M. Asif Khan Appl. Phys. Lett., Vol. 82, No. 16, 21 April 2003.
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SeminarPaper review 報告者: W. C. Jian
Improved performance of 325-nm emission AlGaN ultraviolet light emitting diodes • A. Chitnis, J. P. Zhang, V. Adivarahan, M. Shatalov, S. Wu, R. Pachipulusu, V. Mandavilli, and M. Asif Khan • Appl. Phys. Lett., Vol. 82, No. 16, 21 April 2003
Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75Nquantum-well light-emitting diodes with Mg-doped superlattice layers • A. Kinoshita, H. Hirayama, M. Ainoya, and Y. Aoyagi • Appl. Phys. Lett., Vol. 77, No. 2, 10 July 2000
Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer • Hideki Hirayama, Yusuke Tsukada, Tetsutoshi Maeda, and Norihiko Kamata • Applied Physics Express 3 (2010) 031002