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The Past, Present, and Future of IGBT Technology

The Past, Present, and Future of IGBT Technology. John Shen Grainger Endowed Chair Professor Department of Electrical & Computer Engineering Illinois Institute of Technology Chicago, USA johnshen@ieee.org April 7, 2014. Outline. Applications and market of power semiconductor devices

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The Past, Present, and Future of IGBT Technology

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  1. The Past, Present, and Future of IGBT Technology John Shen Grainger Endowed Chair Professor Department of Electrical & Computer Engineering Illinois Institute of Technology Chicago, USA johnshen@ieee.org April 7, 2014

  2. Outline Applications and market of power semiconductor devices History of IGBT Technology Very high power IGBTs Future trends of IGBTtechnology Summary

  3. Application of Power Semiconductors Silicon limit 100M 10M Thyristors 1M Power [VA] Wide Bandgap Semiconductors 100k IGBT (Insulated Gate Bipolar Transistor) BJT 10k 1k MOSFET 100 Power IC 1k 1M 100 10k 100k 100M 10M Frequency [Hz]

  4. Worldwide Market of Power Semiconductors 2008market data from iSupply $14.1B of discrete power devices in 2010 (Yanoand IMS)

  5. Market Segments of Power Semiconductors

  6. Outline Applications and market of power semiconductor devices History of IGBT Technology Very high power IGBTs Future trends of IGBTtechnology Summary

  7. History of IGBT Technology Wafer scale IGBT MCT IGBTPress-Pack SiC IGBT Mitsubishi’s CS-IGBT Theoretical limit of IGBT IGBTPower Module Nano-IGBT Toshiba’s IEGT (or 4500V IGBT) Everyone is on thin wafer Field-Stop IGBT 2010 Everyone is on PT-IGBT Trench IGBT 2000 Siemens’ NPT-IGBT Toshiba solved latch-up issue 1990 PT-IGBT by GEand RCA 1980

  8. Design Trade-off of IGBT IGBTturn-off IGBT turn-on

  9. Improved Conductivity Modulation of IGBT Carrier Distribution PiNDiode N- N+ P+ Resistive Bottleneck Conventional IGBT N- P+ Enhanced IGBT N- P+

  10. Improved Conductivity Modulation of IGBT M. Rahimoet al. 2006

  11. Trench Gate IGBT Concept Shen & Omura, Proceedings of the IEEE, April 2007

  12. Thin Wafer Field Stop IGBT Concept Shen & Omura, Proceedings of the IEEE, April 2007

  13. Evolution of 1200VThin Wafer IGBTs J. Vobeckt, ISPSD2008

  14. IGBT Performance Trend Specific RDS(ON)=Vce(on)/Current Density 1200V IGBT @125oC Toshiba Mitsubishi RDS(ON) (mΩ-cm2) Fuji Electric EOFF ~ 0.1mJ/A , Vcc= 600V

  15. Outline Applications and market of power semiconductor devices History of IGBT Technology Very high power IGBTs Future trends of IGBTtechnology Summary

  16. Very High Power IGBTs New steel mill installations（TMEC 2012） 3300/4500/6500V，500-5000A MV voltage source inverters（replacing GTOor IGCT)

  17. Applications of High Power IGBTs （Source：ABB） HVDC light FACTS MV drives (wind generators, PV, oil & gas pumps, etc.)

  18. Topologies of HP-IGBT Converters Cascade H-bridge NPC-MLC IGBTseries-connection

  19. Expanding the Power Range of IGBT Silicon limit 100M 10M HP-IGBT 1M GTO Power [VA] Wide Bandgap Semiconductors 100k IGBT (Insulated Gate Bipolar Transistor) BJT 10k 1k MOSFET 100 Power IC 1k 1M 100 10k 100k 100M 10M Frequency [Hz]

  20. Technical Barrier of HP-IGBT Parallel IGBT chips in power modules Wafer scale thyristors IGBT chip size <2cm2，current rating <150A, much more sensitive to defects than GTO Multi-chip IGBT power modules parallel IGBT chips through bondwires with a current and thermal capability inferior to pressure pack GTO

  21. Concept of Wafer Scale IGBTs IGBT Zone 1 Laser Trimmer Emitter Collector Gate Spring Contact Pin Gate Gate Emitter Pad IGBT Wafer Ceramic Casing Emitter 1 Defective IGBT Zone Isolation of Defective Zones with laser trimming Collector Collector Pad

  22. Outline Applications and market of power semiconductor devices History of IGBT Technology Very high power IGBTs Future trends of IGBTtechnology Summary

  23. Theoretical Limit of IGBT Performance （A. Nakagawa 2006）

  24. Nanoscale IGBT Structure （M. Sumitomo, 2012）

  25. Superjunction IGBT 1200V IGBT simulation （K. Oh et al 2006）

  26. SiCIGBT （Cree 2012） 15000V，24 mΩ-cm2， 4H-SiCP-IGBT 12500V，5.3 mΩ-cm2， 4H-SiCN-IGBT

  27. Summary IGBT is the device of choice for medium power applications We have not reached the theoretical limit of the fundamental silicon IGBT structure yet even after 30 years of amazing technology advancement! Still a lot of potential and return of investment in silicon (and BWG) power device research! Emerging opportunity to push IGBT into megawatt (1-100MW) high power applications

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