An Analysis of DG SOI MOSFET Modeling and Simulation with PSP, BSIM-IMG and HiSIM_SOTB

1. An Analysis of DG SOI MOSFET Modeling and Simulation with PSP, BSIM-IMG and HiSIM_SOTB Guofang Wang, Jun Liu June21, 2019 The Key Laboratory for RF Circuits and Systems of Ministry of Education, Hangzhou Dianzi University

2. Outline

3. 1. Introduction Bulk CMOS PD/FD SOI MOS SOI (Silicon On Insulator)

4. 1. Introduction size ofthedevicereduced integrationdegreeincreased application frequency  increased Undesirable phenomena brought

5. 1. Introduction schematic structure of DGMOSFET Advantages • higher integration • higher transconductance • higher electron mobility • inhibit SCEs

6. 2.Model Development and Extraction • PSP PSP NXP CEA-LETI • physical equations and scalability • contain all physical effects • substrate model

7. 2.Model Development and Extraction Advantages: independent double-gate structure FD & DG devices back gate biasing effect back-gate depletion Disadvantages: no charge accumulation Process affect switch application • BSIM-IMG

8. 2.Model Development and Extraction Advantages: ultra-thin SOI BOX layer double-gatestructure allthecharges Disadvantages: model description substrate model • HiSIM_SOTB

9. 3、Model Verification • HiSIM_SOTB • BSIM-IMG & PSP

10. 3、Model Verification • PSP (b)transconductance • transfer characteristic the two simulation lines are almost coincident at Vbg = - 5 V and Vbg = 0 V

11. 3、Model Verification • BSIM-IMG (b)transconductance • transfer characteristic The three simulation lines are fitting good at different back-gate bias

12. 3、Model Verification • HiSIM_SOTB • transfer characteristic (b)transconductance the two simulation lines are almost coincident at Vbg = 0 V and Vbg = 5 V

13. 3、Model Verification Comparison of transfer characteristics at Vbg = -5 V

14. 3、Model Verification Comparison of transfer characteristics at Vbg = 0 V

15. 3、Model Verification Comparison of transfer characteristics at Vbg = 5 V

16. 3、Model Verification Table Error of simulation accuracy

17. 4.Conclusion • Three models are selected to modeling • and simulation • C-V and I-V characteristics have been presented • The BSIM-IMG model has slightly insufficient in • C-V characteristic • BSIM-IMG is more accurate in I-V characteristic

18. THE END

19. THE END Thankyou!