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ℏ ω exc.

CB. h w exc. VB. E F. CB. h w exc. h w exc. h w QD. h w QD. VB. V read. h w QD. E F. (c). (d). (a). Write. (b). ℏ ω exc. D t=12µs. D t. PL. EL Intensity (arb. units). S. R. Readout. Energy (eV). Figure S1 – Kroutvar et al. D t. p-contact. ON. Response time 0.2ns

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ℏ ω exc.

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  1. CB hwexc. VB EF CB hwexc. hwexc. hwQD hwQD VB Vread hwQD EF (c) (d) (a) Write (b) ℏωexc. Dt=12µs Dt PL EL Intensity (arb. units) S R Readout Energy (eV) Figure S1 – Kroutvar et al

  2. Dt p-contact ON Response time 0.2ns SPCM-AQR-16 Jobin Yvon Triax 550 Laser 1µs OFF Spectrometer Dl<0.2nm SPC Vread=1.0V Voltage .3µs Vstore=-1.2V ON Detector .5µs OFF Laser diode hwexc. Time Repetition rate PicoQuant 954nm hwQD Pulse generator Agilent 81104A Rise time 3ns Frequency: 0.25 – 100kHz Figure S2 – Kroutvar et al

  3. Ti:Sa hwexc.(eV) EL Intensity (arb. units) Energy (eV) Figure S3 – Kroutvar et al

  4. tstore(10K) »1ms tstore(90K)=(60±5)µs tstore(100K)=(30±5)µs Figure S4 – Kroutvar et al

  5. hwQD hwQD hwQD Bright exciton Jz= -1 (a) s+ Bright exciton Jz= -1 CB s+ Dt or Storage (c) hwexc. (b) VB s+ t Contact QD Dark exciton Jz= -2 Bright exciton Jz= -1 Excitation Readout Figure S5 – Kroutvar et al

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