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Bipolar Junction Transistor (BJT) Chapter 12 31 March and 2 April 2014

Bipolar Junction Transistor (BJT) Chapter 12 31 March and 2 April 2014. Operation involves both electrons and holes, so is called “bipolar” Junction E-B is forward biased, so electrons from the E (emitter) to the B (base)

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Bipolar Junction Transistor (BJT) Chapter 12 31 March and 2 April 2014

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  1. Bipolar Junction Transistor (BJT) Chapter 1231 March and 2 April 2014 • Operation involves both electrons and holes, so is called “bipolar” • Junction E-B is forward biased, so electrons from the E (emitter) to the B (base) • Junction B-C is reverse biased, so minority carrier electron concentration in B region at the B-C edge is close to zero. • In the B region, there is large gradient of electron (minority carrier) concentration; the electron injected from E region will diffuse across the B region into the B-C space charge region • An electric field due to the B-C reverse bias will sweep the electrons to the C (collector) region • The B regions must be thinner than the minority carrier diffusion length in order to make as many electrons as possible to reach the C region.

  2. Operation modes of BJT Analysis: Active mode: most useful bias mode when using a bipolar junction transistor as an amplifier Cutoff mode: no electron injected to the base, all currents are zero. Used as “off” state in digital circuits or open switch Saturation mode: used as “on” state in digital circuits or closed switch Reverse active mode: emitter and collector regions switch roles. Seldom used. 12

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