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IPL (Interfacial Passivation layer) - A WIP

IPL (Interfacial Passivation layer) - A WIP. Acknowledgement: Prof. P. Berger and Prof. J.-P. Locquet. An Ideal IPL. Fundamental requirement electronic states outside of Eg to unpin the Ef of the host (F1) Electronic requirements high Eg for minimize leakage (EL)

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IPL (Interfacial Passivation layer) - A WIP

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  1. IPL (Interfacial Passivation layer)- A WIP Wei-E Wang Acknowledgement: Prof. P. Berger and Prof. J.-P. Locquet

  2. An Ideal IPL • Fundamental requirement • electronic states outside of Eg to unpin the Ef of the host (F1) • Electronic requirements • high Eg for minimize leakage (EL) • Must reduce recombination velocity (EV) • good dielectric constant for meeting EOT scaling budget (EK) • Thermodynamic requirements • must “bond” to host below and hi-k above for thermodynamic stability (stitching criteria) (T1) • “Abrupt” interface is an adequate but not sufficient condition. • No “bonding” (or stitching), such as Al2O3 on GaAs, will not work. GaAs AlAs Al2O3 may work… • Mechanical requirements • Must Lattice match host below and hi-k above (M1) • Should be hydrogen passivation friendly • Si CMOS needs it. No way that III-V can do without (H1) • Deuterium passivation can also be considered (D1) Wei-E Wang

  3. Criteria for evaluating IPL proposal Wei-E Wang

  4. Proposals utilizing the IPL rules Wei-E Wang

  5. In-situ and Ex-situ Top-down Oxidation • InP/InGaAs AlGaAs +in-situ/ex-situ oxidationAl2O3 • InP/InGaAs  InAlAs +in-situ/ex-situ oxidationAl2O3 Wei-E Wang

  6. GaAs GaN ex-situ nitridation • GaN has 20% lattice mismatch (~ 1ML allowed) • Plasma nitride usually porous • Old GaN MOS_CAP results poor • New wet nitridation by “Hydrazine Sulfide’ (NH2NH2 · H2SO4) at RT claimed to have good GaN layer • Thermally stable for >660C. • PL increased • Better than sulfide treated GaAs • Worth a shot (+MBE Al2O3 or ALD-Al2O3) Wei-E Wang

  7. GaAs  GaO Anodization • P. Berger initiated • GaO washed away by ALD Al2O3 • Can try GaO + MBE Al2O3 Wei-E Wang

  8. GaAs  GaS Wei-E Wang

  9. GaAs + Ge • MBE Ge usually done in a different chamber • Ga diffuses into Ge at T>400C • Ge channel will not work w/o Si • Thick Ge/GeO2 reduced Vbi (and depletion depth) of GaAs by 0.3V • No stitching Wei-E Wang

  10. GaAs + Si • Need to start with Ga rich Wei-E Wang

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