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IEEE COMMAD 2002, Sydney, Australia. SCHOTTKY-BARRIER CONTACTS to CARBON NANOTUBE FETs L.C. Castro, D.L. John and D.L. Pulfrey Department of Electrical and Computer Engineering University of British Columbia Vancouver, B.C. V6T1Z4, Canada pulfrey@ece.ubc.ca. gate. Oxide (15 nm).
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IEEE COMMAD 2002, Sydney, Australia SCHOTTKY-BARRIER CONTACTS to CARBON NANOTUBE FETs L.C. Castro, D.L. John and D.L. Pulfrey Department of Electrical and Computer Engineering University of British Columbia Vancouver, B.C. V6T1Z4, Canada pulfrey@ece.ubc.ca
gate Oxide (15 nm) Coaxial FET(UBC) IEEE COMMAD 2002, Sydney, Australia CARBON NANOTUBE FET STRUCTURES Planar FET(courtesy R. Martel, IBM)
IEEE COMMAD 2002, Sydney, Australia CONDUCTION BAND PROFILESVARIOUS VGS, VDS
IEEE COMMAD 2002, Sydney, Australia SOLVING FOR THE POTENTIAL PROFILE E EF 0.5 f(E)
IEEE COMMAD 2002, Sydney, Australia NON-EQUILIBRIUM ELECTRON DISTRIBUTIONS
As the overall system transmission probability, is now known, Landauer’s expression for the current can be employed: IEEE COMMAD 2002, Sydney, Australia SOLVE FOR THE DRAIN CURRENT
IEEE COMMAD 2002, Sydney, Australia DRAIN CHARACTERISTICS
IEEE COMMAD 2002, Sydney, Australia COMPARISON WITH NON-SB MODEL
IEEE COMMAD 2002, Sydney, Australia CONCLUSIONS • Schottky barriers play a crucial role in determining the drain current. • More detailed characterization of the contact is needed. • Complete solution for the potential profile is needed.
Work-function Engineering Legend: MS = 0 eV MS = -0.2 eV L.C. Castro • Effect of work-function difference for VDS < VGS
Source and Drain Contact Work-function Engineering L.C. Castro