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Overview

Overview. The concept of building modules in MCM-D technology MCM-D modules for the ATLAS Pixel Detector Measurements on Prototypes Lab measurements on full scale module and single chip devices Testbeam measurements on single chip devices Conclusion and Outlook. ATLAS Pixel Detector.

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Overview

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  1. Overview • The concept of building modules in MCM-D technology • MCM-D modules for the ATLAS Pixel Detector • Measurements on Prototypes • Lab measurements on full scale module and single chip devices • Testbeam measurements on single chip devices • Conclusion and Outlook

  2. ATLAS Pixel Detector • 2200 modules • 2.2 m2 active Si • 1 x 108 channels

  3. The basic structure of modules for the ATLAS Pixel Detector • Sensor tile (16.4 mm x 60.4 mm active area)Main components which need to be contacted: • 16 read out IC´s, each providing 18 x 160 pixel unit cells (preamplifier, discriminator, digital readout; pixel cell size: 400 x 50 µm2)46080 connections in the pixel cell array per module with bump-bonding and flip-chipping as interconnection technique • one module controller chip • Idea of using a Thin Film technology to perform the signal interconnections and power distribution on the active sensor

  4. Up to 5 copper layers: magnetron sputtered up to 2 mm Ti/Cu/Ti 10 m/ additive electroplatingup to 5 mm Ti/Cu Minimal width and spacing 10 and 20 mm Final metallisation: electroless 5mm Ni:P/ 200nm Au “Spin-on” polymer: BCB(Benzocyclobutene / DOW:CYCLOTENE™) Photosensitive Specific dielectric constant er= 2.7 Process temperatures :1h 220C per layer last layer 1h 250 C Thickness / layer 4 - 10mm Via  >20mm, Pad 30µm MCM-D, a Thin Film Technology Multi Chip Module Deposited conductor layers dielectric layers

  5. MCM-D Module

  6. Advantages of modules in MCM-D technology • A robust, “easy-to-handle” module with bump-bonding as the only interconnection technique • Signal lines in µ-strip configuration, so with low crosstalk and well defined impedance • Allows routing in the pixel cell array to contact sensor and electronic cells which are not facing each other

  7. Schematic Cross-Section of a Bus System

  8. Some pictures of the MCM-D structures Feed-throughs 50 mm power contact signal bus

  9. Feasibility Studies • Just two exemplary plots • The sensor properties are not affected by the MCM-D technology 10

  10. Yield Test - Thin Film Feed-through structures • Daisy-Chain interconnection • Four copper layers • 1.1 .106 monitored vias with a diameter of 25µm • Measured defect rate 8.13 .10-6(9 defects of 1 105 920 vias) • We expect 1.5 unconnected pixel/module BCB etched for better visualisation

  11. Full Scale Prototype Module MCC Frontend Chips Additional test pads contacted by wire bonding

  12. Threshold and Noise(Untuned Full Scale Module) The MCM-D Module shows encouraging performance regarding Threshold distribution and Noise performance Module: MCM-D T1/Frontend B

  13. Single Chip Module A Single Chip Module consists of: Sensor cell array + MCM-D interconnections + Frontend chip • Investigation of different Feed-through layouts, especially routing Picture: Frontend C on Single Chip PCB

  14. Feed-throughs in different layouts Class R1 (to neighbouring pixel cell)Class R2 (skipping one cell)Class R3 (skipping two cells) Class U400/600 (two columns at the border of the hybrid) Class U (most common class)

  15. Threshold distribution(Single Chip) Hybrid: MCM-D ST1/Frontend C

  16. Noise distribution(Single Chip) Hybrid: MCM-D ST1/Frontend C

  17. Summary of Noise measurements There is no influence on the performance, due to Feed-throughs in MCM-D. As expected, the crossing of copper lines in different layers (classes Ri) increases the Noise, due to the higher interpixel capacitance.

  18. Crosstalk Measurements Crosstalk = fraction of charge that couples into the neighbouring pixel through the interpixel capacitance Q Pixel N (masked to read out) hits Pixel N+1 (with threshold T) Crosstalk = T / Q For Pixel N+i similar

  19. Crosstalk distribution(Single Chip) Ri U600 “ganged” Pixel: These electronic cells are connected to two sensor cells (by design).

  20. Summary of crosstalk measurements Note 1: There is no influence on the crosstalk, due to the Feed-throughs in MCM-D. Note 2: The performance of class R1 and R2 layouts is comparable to the 600µm long sensor cells (U600).

  21. Source measurement Upper 3 cells not connected (by design) The MCM-D hybrid shows a uniform functionality. Defects were recognized as bad bump connections. nr of hits Am241: Gamma-rays

  22. Testbeam data • H8 Testbeam at SPS (CERN) • primary: 450 GeV protons • Data was mainly taken with:180 GeV pions • Telescope with 4 layers of strip-detectors (Resolution: 3 µm) H8 Telescope system All presented measurements: (MCM-D) SSG/Frontend B

  23. Reconstructed energy deposition Conventional hybrid Single hit events Double hit events (added charges) No charge loss can be seen, due to the MCM-D structures MCM-D hybrid

  24. Single hit resolution Conventional hybrid MCM-D hybrid Difference between predicted (Telescope) and measured particle track P2: sigma of gaussian tail P3: width of plateau

  25. Double hit resolution Conventional hybrid MCM-D hybrid Double hit resolution: 5µm (conventional and MCM-D hybrids)

  26. Multi Chip Module-Deposited Conclusion • It is possible to build “easy-to-handle” Pixel Detector Modules with the MCM-D technique. • The Sensor is not harmed / damaged by the processing. • The signal and power distribution structures are able to drive full modules. • No problems appeared due to the necessary connections between electronic and sensor cells. Outlook: • Explore the full potential of the MCM-D technique, modules with a homogeneous resolution may be build.

  27. Further possibilities of the MCM-D technology • The possibility of integrating passive components in MCM-D is under investigation. • R and C: • Currently possible (due to the high process temperature this is not (yet) possible for our application!): • 720 pF/mm2 with Ta2O5 as dielectric • 10-100 / with TaN as resistor material Inductor in MCM-D Technology

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