(TH2B - 01)

1. 65-GHz Doppler Sensor with On-Chip Antenna in 0.18µm SiGe BiCMOS • Terry Yao, Lamia Tchoketch-Kebir, Olga Yuryevich, • Michael Gordon and Sorin P. Voinigescu (TH2B - 01) University of Toronto

2. Outline • Motivation • System Overview and Design • Experimental Results • Conclusions • Acknowledgments 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

3. Motivation • mm-wave integration in silicon accelerated by: • Significantly smaller form factors of on-chip passives (inductors, transformers, antennae) • Advances in SiGe BiCMOS • Target applications: • mm-wave sensors for medical and security applications • Short range automotive radar 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

4. State-of-the-Art in mm-Wave Integration • SiGe favoured over CMOS due to higher breakdown voltage  higher PA power, lower phase noise VCOs • Critical challenge  tuning BW, phase noise and output power of VCO • No Tx/Rx IC with antenna and fundamental VCO 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

5. Integrated Fundamental Frequency VCO • Challenges: • Accurate fosc modeling of passives and parasitics • Low phase noise  high-Q tank, large BVCEO, large Vosc • High POUTlarge BVCEO, IBIAS, accurate matching • Wide tuning range  high capacitance-ratio varactors • Benefits: • Less EMI, no filtering required • Area and power savings (multiplier structure, off-chip transition eliminated, etc.) • Higher integration level = lower overall cost Note: Static frequency dividers equally important as VCO; so far only SiGe ones demonstrated >60GHz with low power (T. Dickson, SiRF ’06; E. Laskin, BCTM ’06) 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

6. Outline • Motivation • System Overview and Design • Experimental Results • Conclusions • Acknowledgments 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

7. System Highlights and Overview • Extensive use of small footprint inductors as matching elements  area savings • HBT cascodes for higher gain, isolation 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

8. 2-stage single-ended cascode LNA with vertically stacked transformer output Bipolar IF amplifier for reduced 1/f noise Down-convert mixer noise- and power-matched to 200Ω differential Zout of LNA System Design – Receive Path 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

9. 2-Stage emitter follower buffers 65GHz output buffer driving 50Ω loads per side Differential Colpitts 61-67GHz VCO (shared with receive path) System Design – Transmit Path 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

10. Building Blocks: Mixer • Key design goals: • 59-65GHz operation • Low noise at low IF • High conversion gain • HBT for reduced 1/f noise • Simultaneously noise- and power-matched to 200Ω differential LNA output • Simulated: G ~ 9.2dB; IIP3 ~ 4.2dBm; NF ~ 13dB • 13.2mW from 3.3V supply 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

11. 34 µm mm-Wave Passives • Reduced form factor of on-chip passives at mm-waves • Inductors preferred for area efficiency and low-loss • ASITIC with >90% accuracy; 2-π model 65-GHz polyphase filter and measured phase response 1-65GHz Stacked transformer and power transfer measured up to 94GHz 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

12. Patch Antenna Design • Patch Antenna Gain: -8.5dBi • Patch has similar gain as dipole but better isolation on Si 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

13. Outline • Motivation • System Overview and Design • Experimental Results • Conclusions • Acknowledgments 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

14. Fabrication Technology • Jazz Semiconductor’s SBC18SiGe BiCMOS process • fT, fMAX >150 GHz • 6-metal backend 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

15. 1.7mm LNA 1.7mm x 1.3mm 1.3mm Patch Antenna Mixer Output Buffer VCO 1mm IF Amp LNA Mixer Output VCO Buffer IF 1mm Amp 1mm 1mm Fabricated Structures 2.5mm x 2.5mm 1mm x 1mm 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

16. 2-Stage Cascode LNA Measurements • Breakout measurements: • 14dB S21 @ 65GHz • Input P1dB = -12.8dBm • Simulated NF = 10.5dB • 40mW from 3.3V supply • Total Area: 370 x 480µm2 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

17. Experimental Results • on-wafer probing of sensor without on-chip antenna • measurement using horn antenna/suspended probe and adjustable metal reflector 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

18. Experimental Results • SE meas. with external RF input of -48dBm @ 64GHz • SE down-conversion gain of 16.5dB • SE transmit output spectrum • Diff. output power +4.3dBm after de-embedding set-up loss 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

19. Experimental Results • 6 elevations of horn antenna over Rx patch antenna (~ 15mm - 100mm) • Propagation loss contributes to loss in conversion gain • 16.5dB w/o antenna • -24.5dB suspended probe over antenna • -26dB horn antenna over patch antenna 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

20. Experimental Results Measured IIP3 = -20dBm Gain in good agreement with spectral measurement 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

21. Performance Summary S: Single-ended D: Differential 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

22. Conclusions • Single-chip 65-GHz Doppler sensor featuring: • 61-67GHz integrated varactor-tuned fundamental frequency VCO • on-chip patch antenna • extensive use of lumped passives to minimize chip area • Chip demonstrates: • high level of mm-wave integration achievable in today’s production silicon technology • feasibility of low-cost mm-wave systems for sensor and radio applications 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

23. Acknowledgments • NSERC and Micronet for financial support • Jazz Semiconductor for fabrication • CMC for CAD tools • K. Tang, K. Yau and S. Shahramian at U of T for simulation and measurement support 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

24. Thank You. Questions… 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

25. Backup Slides 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

26. System Design Considerations • System acts as speed and motion sensor according to the Doppler effect: • Range of detectable speeds dependent on Doppler freq. shift • Upper bound set by IF amplifier BW • Lower bound set by VCO phase noise 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

27. Building Blocks: On-Chip VCO • Integrated 61-67GHz VCO • Frequency scaled from earlier 60-GHz design by C. Lee (CSICS, ’04) with phase noise of -104dBc/Hz @ 1MHz carrier offset • Differential Colpitts configuration with accumulation mode nMOS varactor (C2) and inductive emitter degeneration (LE) for wide tuning range, low phase noise 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

28. System Design Considerations Why Patch Antenna? • Low profile planar configuration  ease of integration • Can be accurately designed and analyzed using transmission-line model • Metal ground plane and substrate contacts help maximize isolation, reduce coupling into substrate 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

29. Simulated Antenna Gain Results 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS

30. Radar Measurement Setup Lowest Horn Antenna Elevation Highest Horn Antenna Elevation 65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS