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Journal of Crystal Growth 312 (2010) 258–262

Characteristic enhancement of the blue LED chip by the growth and fabrication on patterned sapphire (0 0 0 1) substrate. Seong-Muk Jeong , SuthanKissinger , Dong-WookKim , SeungJaeLee , Jin-SooKim , Haeng-Keun Ahn , Cheul-RoLee. Journal of Crystal Growth 312 (2010) 258–262. D.J. Sun. Outline.

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Journal of Crystal Growth 312 (2010) 258–262

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  1. Characteristic enhancement of the blue LED chip by the growth and fabrication on patterned sapphire (0 0 0 1) substrate Seong-Muk Jeong , SuthanKissinger , Dong-WookKim , SeungJaeLee , Jin-SooKim , Haeng-Keun Ahn , Cheul-RoLee Journal of Crystal Growth 312 (2010) 258–262 D.J.Sun

  2. Outline Introduction Experiment Results and discussion Conclusion References

  3. Introduction In this study, we describe the fabrication, optical and electrical properties of InGaN/GaN LEDs on lens-shaped patterened sapphire substrate (PSS) . GaN-based LEDs prepared on PSS have increased light extraction efficiency by scattering and also reduce the threading dislocation(TD) density .

  4. Experiment

  5. Experiment Hight：1.5µm Diameter：5.8µm Distance：3.7µm

  6. Results and discussion Fig. 4. SEM micrographsoftheGaNsurfacegrownonthelens-shapedPSSforthegrowthtimeof(a)10min,(b)20min,(c)30min,(d)40min,(e)60min,and(f)80min.

  7. Results and discussion

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