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Terahertz Transistors

Terahertz Transistors. Nick Oswald Electrical and Computer Engineering at Oklahoma State University. History. 1947 first transistor Created by John Bardeen, Walter Brattain and William Shockley Point contact transistor Semiconducting material Germanium

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Terahertz Transistors

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  1. Terahertz Transistors Nick Oswald Electrical and Computer Engineering at Oklahoma State University

  2. History • 1947 first transistor • Created by John Bardeen, Walter Brattain and William Shockley • Point contact transistor • Semiconducting material Germanium • By early 1950’s transistors made its way into electronics • Replaced vacuum tubes Picture from: http://www.porticus.org/bell/belllabs_transistor.html

  3. History Continued • Integrated Circuit • 1958 Jack Kilby • Combined electrical devices on a single chip • Planar Technology • 1958 Jean Horni • Created a transistor with a flat profile • IC with Planar Technology • 1959 Robert Noyce • Combined IC and Planar technology

  4. Moore’s Law • Published in 1965 by Gordon Moore • Has been extremely accurate to this point • Inspired the progression of technology • Has been used to predict the feature size and speed of transistors Picture from http://en.wikipedia.org/wiki/Moore%27s_Law#_note-0

  5. Proposed THz Transistors • Traditional Transistor But smaller features • December 2006 • Milton Feng • University of Illinois at Urbana-Champagne • Ballistic Transistor • August 2006 • Quentin Diduck • University of Rochester • Carbon Nanotube Field Effect Transistor (CNTFET) • Many Different Designs • June 2007 • Yury A. Tarankanov and Jari M. Kinaret

  6. Traditional Transistor with Smaller Feature size • Switching Speeds • 845 GHz when chilled to -55° C • 765 GHz when at room temperature • Fastest Transistor when proposed • Base Mesa • Old Design 1.5μm • New Design 550nm • Measured using an SEM image Picture from http://www.news.uiuc.edu/NEWS/06/1211transistor.html

  7. Ballistic Transistor • Operation • 0 or 1 based on the direction of flow • Direction changes based on the field applied to the transistor • Deflects electrons off a triangle • Electrons flow in a plane • Characteristics • Materials • indium gallium arsenide • indium phosphide • Gallium arsenide • 70nm feature size • Use etching to create the triangle Picture from http://www.technologyreview.com/Infotech/17368/?a=f

  8. CNTFET • Many different designs • Carbon nanotube ring • Semiconducting characteristics • Conducting characteristics • Carbon nanotube cantilever • Single walled nanotube structure (SWNT) • Lying on a layer of Silicon dioxide • Attached to the drain and source • 2 separate designs using a metallic multi-walled nanotube structure (MWNT) acting as gate • Doubly clamped • Singly clamped

  9. CNTFET continued • SWNT • Length 1000nm • Diameter 1.7nm • MWNT • Doubly Clamped • Length 2000nm • Support height 30nm • Singly Clamped • Length 1000nm • Support height 40nm and 60nm • Gate bar height 25nm and 40nm Picture used from Yury A. Tarakanov, Jari M. Kinaret, “A Carbon Nanotube Field Effect Transistor with a Suspended Nanotube Gate,” Nano Letters, Vol. 7, No. 8, pp. 2291-2294, June 2007

  10. Conclusions • Moore’s Law is continuing to be an influence • Many new ideas for a THz transistor • Eventually a complete redesign of the transistor will be necessary

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