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Actividades de I+D en IGFAE/USC

Actividades de I+D en IGFAE/USC . Pablo Vázquez (IGFAE-USC). IV JORNADAS SOBRE LA PARTICIPACIÓN ESPAÑOLA EN FUTUROS ACELERADORES LINEALES Madrid, 2-3 Diciembre 2009. R&D activities at Santiago. R&D in pixel detectors R&D in microstrips silicon detectors DEPFET project

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Actividades de I+D en IGFAE/USC

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  1. Actividades de I+D en IGFAE/USC Pablo Vázquez (IGFAE-USC) IV JORNADAS SOBRE LA PARTICIPACIÓN ESPAÑOLA EN FUTUROS ACELERADORES LINEALES Madrid, 2-3 Diciembre 2009

  2. R&D activities at Santiago • R&D in pixel detectors • R&D in microstripssilicondetectors • DEPFET project • Belle II PXD PS system • Sensor characterization (Lab, testbeams) • Gamma irradiation (Co-60) • FTD simulations • Personneldedicated: 5FTE • Pablo Vázquez, Abraham Gallas, Daniel Esperante, Jevgenij Visniakov, Eliseo Pérez, Javier Caride IV jornadas FLC, Madrid, 2-3 Dec 2009

  3. R&D in pixel detectors • CERN + LHCb + Timepix/Medipixcollaboration • 2 test beamssummer 2009 at CERN • Telescope (6) + DUT madewithTimepix • 55 um pixel size • 300 umthickness • Hit resolution ~5 um • Trackresolution ~2.6 um IV jornadas FLC, Madrid, 2-3 Dec 2009

  4. R&D in pixel detectors • Timepix/Medipixcollaborationisworking in adaptingtheTimepix ASIC for HEP experiments • Sincewehaveobtainedverygoodresults in testbeams • TheLHCb VELO upgradegroup has decidedtochoosethetimepix as baseline pixel solution • LHCb + Timepix/Medipix has decidedtobuildanupgradedversion of theTimepixtelescope IV jornadas FLC, Madrid, 2-3 Dec 2009

  5. R&D in pixel detectors • USC in collaborationwiththe CNM, Glasgow and CERN are buildingthinned pixel detectors • 2D sensorsthinned up to 200, 150 and 100 um • TobereadoutwiththeTimepix and characterized as function of thethickness • Chargesharing • Efficiency • Time of arrivalmeasurements • Sensors are beingproducednow • Bumpbondingtryoutalso in the CNM • Possibledesignvariationsunderdiscussion • Elongatedpixels at 1st row, edgless, gardrings IV jornadas FLC, Madrid, 2-3 Dec 2009

  6. R&D in pixel and microstripssiliconsensors • TelescopebasedonTimepixwithfollowingcharacteristics • Active area: 2.8x2.8 cm2 • Resolucion: 2 um, 1 ns • Readoutrate: 75 kHz • Tobeused in R&D in detectorsfor ILC or LHC upgradeswiththecontribution of the USC • TimingUnit, integration of the DUT daq in the DAQ of thetelescope • Mechanics of the DUT • Cold box toworkwithirradiatedsensors in the test beam IV jornadas FLC, Madrid, 2-3 Dec 2009

  7. R&D in microstripssilicondetectors • In case the pixel optioncannotmeetthephysics and time scalerequirements, thesiliconstripoptionshouldholdforLHCb VELO upgrade • Thestripoptionshouldstay as close as possibletothecurrentdesignimprovingits performance • 40 MHz readout • Highergranularity (x10 luminosityincrease) • ImpactParameterresolution • Radiationhardness • USC wantstoparticipate in thedesign and characterization of the new sensors, in the module assembly and testswithparticlebeams at CERN • Veryusefulforthe FTD conception of ILC IV jornadas FLC, Madrid, 2-3 Dec 2009

  8. R&D in microstripssilicondetectors • 1 module assembled in Santiago tobetested in thelab and in testbeam • IT hybrid (3 beetles) + 2 pitch adapters + PR01 Hamamatsusensor IV jornadas FLC, Madrid, 2-3 Dec 2009

  9. DEPFET: Belle II PXD PS system 22 x half-module 2m 50cm IV jornadas FLC, Madrid, 2-3 Dec 2009 44 half-modules 17 voltages per half-module Regulationcardsonradiation and B-fieldenviroment

  10. DEPFET: Belle II PXD PS system Belle layout 750 voltages 1500 lines ~krad + H field Regul. Regul. DHH DHH PXD PS PS Electronicshut No radiation > 500W IV jornadas FLC, Madrid, 2-3 Dec 2009

  11. DEPFET: sensor characterization 241Am sourceon a PXD5 matrix • Lab test • Gain (radioactivesource), chargecollection (laser) • Dependencewithradiation IV jornadas FLC, Madrid, 2-3 Dec 2009

  12. DEPFET: sensor characterization • Testbeams • TB09 data taking and analysis • Futuretestbeams • Irradiated module • Powersupplyprototype IV jornadas FLC, Madrid, 2-3 Dec 2009

  13. DEPFET: 2009 test beamanalysis Eutelescopeframeworkinstalled, someprocesorsworking IV jornadas FLC, Madrid, 2-3 Dec 2009

  14. Gamma irradiation • Faileddepfet PXD5 module irradiationthissummer • Module deadbeforeirradiation • PXD5 matrices beingtested in Karlsruhe and Santiago Dec 09 up to 10Mrad • PXD6 matrices willbeirradiatednextyear IV jornadas FLC, Madrid, 2-3 Dec 2009

  15. ASIC development • In collaboration with Grupo de Vision Artificial at USC a project was submitted to Xunta de Galicia to produce in Tezzaron, using TSVs, a 3D pixel readout chip demonstrator for HEP applications • CMOS 3D 130nm technology • 64x64 pixels of 40x40 um pixel size • 4 layers • Sensor: pn diode • Signal conditioning: amplification, test pulse, comparator • Signal processing: time stamping, counter, time over threshold, 8bit memory • Readout • Possible incorporation to R&D for FLC project in 2013 IV jornadas FLC, Madrid, 2-3 Dec 2009

  16. Summaryon R&D activities in the USC • R&D in pixel detectors • R&D in microstripssilicondetectors • DEPFET project • Belle II PXD PS system • Sensor characterization (Lab, testbeams) • Gamma irradiation (Co-60) • FTD simulations IV jornadas FLC, Madrid, 2-3 Dec 2009

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