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Transistor Modeling

Transistor Modeling. ENGI 242 ELEC 222. Hybrid Equivalent Circuit for BJT. h-parameter Model for Common Emitter. Parameters from the spec sheet ( x = lead based on circuit configuration ): h 11 = h ix h 12 = h rx h 21 = h fx h 22 = h ox h rx and h fx are dimensionless ratios

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Transistor Modeling

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  1. Transistor Modeling ENGI 242 ELEC 222

  2. ENGI 242/ELEC 222

  3. Hybrid Equivalent Circuit for BJT ENGI 242/ELEC 222

  4. h-parameter Model for Common Emitter Parameters from the spec sheet (x = lead based on circuit configuration): h11 = hix h12 = hrx h21 = hfx h22 = hox hrx and hfx are dimensionless ratios hix is an impedance <> hox is an admittance <S> ENGI 242/ELEC 222

  5. Short Circuit Input Impedance ENGI 242/ELEC 222

  6. Open Circuit Reverse Transfer Ratio ENGI 242/ELEC 222

  7. Short Circuit Forward Transfer Ratio ENGI 242/ELEC 222

  8. Open Circuit Output Admittance ENGI 242/ELEC 222

  9. Transistor ModelingHybrid Model Pi ENGI 242 ELEC 222

  10. HYBRID MODEL PI ENGI 242/ELEC 222

  11. HYBRID MODEL PI PARAMETERS • Parasitic Resistances • rb = rb’b = ohmic resistance – voltage drop in base region caused by transverse flow of majority carriers, 50 ≤ rb ≤ 500 • rc = rce = collector emitter resistance – change in Ic due to change in Vc, 20 ≤ rc ≤ 500 • rex = emitter lead resistance • important if IC very large, 1 ≤ rex ≤ 3 ENGI 242/ELEC 222

  12. HYBRID MODEL PI PARAMETERS • Parasitic Capacitances • Cje0 = Base-emitter junction (depletion layer) capacitance, 0.1pF ≤ Cje0 ≤ 1pF • C0 = Base-collector junction capacitance, 0.2pF ≤ C0 ≤ 1pF • Ccs0 = Collector-substrate capacitance, 1pF ≤ Ccs0 ≤ 3pF • Cje = 2Cje0 (typical) • 0 =.55V (typical) • F = Forward transit time of minority carriers, average of lifetime of holes and electrons, 0ps ≤ F ≤ 530ps ENGI 242/ELEC 222

  13. HYBRID MODEL PI PARAMETERS • r = rb’e = dynamic emitter resistance – magnitude varies to give correct low frequency value of Vb’e for Ib • r = rb’c = collector base resistance – accounts for change in recombination component of Ib due to change in Vc which causes a change in base storage • c = Cb’e = dynamic emitter capacitance – due to Vb’e stored charge • c = Cb’c = collector base transistion capacitance (CTC) plus Diffusion capacitance (Cd) due to base width modulation • gmV = gmVb’e = Ic – equivalent current generator ENGI 242/ELEC 222

  14. Hybrid Pi Relationships  = gm r ENGI 242/ELEC 222

  15. Hybrid Pi Relationships ENGI 242/ELEC 222

  16. HYBRID MODEL PI MID BAND ENGI 242/ELEC 222

  17. HYBRID MODEL PI HIGH FREQ. ENGI 242/ELEC 222

  18. Common Emitter Amplifier ENGI 242/ELEC 222

  19. Common Emitter Amplifier – DC Bias Model ENGI 242/ELEC 222

  20. Common Emitter Amplifier - Complete Hybrid PI ENGI 242/ELEC 222

  21. Mid Band Hybrid PI Common Emitter ENGI 242/ELEC 222

  22. Equivalent Circuit to find ZO ENGI 242/ELEC 222

  23. High Frequency Hybrid PI CE Amp ENGI 242/ELEC 222

  24. Common Emitter Amplifier ENGI 242/ELEC 222

  25. CE Amplifer Example output ENGI 242/ELEC 222

  26. Common Emitter Amplifier ENGI 242/ELEC 222

  27. CE Amplifer Example output ENGI 242/ELEC 222

  28. Emitter Follower ENGI 242/ELEC 222

  29. Emitter Follower ENGI 242/ELEC 222

  30. Emitter Follower ENGI 242/ELEC 222

  31. Emitter Follower ENGI 242/ELEC 222

  32. Emitter Follower ENGI 242/ELEC 222

  33. Common Base ENGI 242/ELEC 222

  34. Common Base ENGI 242/ELEC 222

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