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Mathieu Benoit

Occupancy studies for CLIC_ILD inner layer and Update on Digitization : Tuning with data, Lorentz angle effects. Mathieu Benoit. Outline. First results on Occupancy for the inner layer of CLIC_ILD Following design from workshop

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Mathieu Benoit

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  1. Occupancystudies for CLIC_ILD inner layer and Update on Digitization: Tuningwith data, Lorentz angle effects Mathieu Benoit

  2. Outline • First results on Occupancy for the inner layer of CLIC_ILD Following design from workshop • Inclusion of Magnetic Field effects in Digitization • DESY 2-4 GeVelectrons data usingTimepix single chip card

  3. (sub) Barrel 4 or Right Outer barrel (sub) Barrel 3 or Right inner barrel (sub) Barrel 2 or Central barrel (sub) Barrel 1 or Leftinner barrel (sub) Barrel 0 or LeftOuter barrel

  4. Simulation • For Now simulation of layer 0+1, resultshere for layer 0 , the mostcriticalat r=29 mm • Simulation withLivermoreLow EM Physicslist • Max Step-size in Silicon =1 um • Includedetla rays , fluorescence • Geometry : • Magnetic Field = 4 T • Beryliumbeam pipe (600um) • Inside beampipe : air at 1e-2 bar • Timepix-Likedigitization • 20x20um pixels • 50 umthickness • Resistivity = 10 kOhm cm • Threshold = 500e • Lorentx angle not takenintoaccounthere • Plots are preliminary, need to includeactual gap in phi • Module 90 (top right) missing, beingprocessed

  5. Barrel layout (layer 0+1) • To ensurehermeticity, layer 0+1need to beplacedcloser to IP than MC model • Option 1: • Radius(layer 1) = 29 mm (31mm before) • Radius(layer 2) =30.87mm (32.87mm before) • To avoid volume overlap, slightly tilt the ladders (here1.5°) • Option 2: • Tilt sensors by lorentz angle (ex: 15 deg) • Add 1-2 ladders (here , 2-> Icosagon !) • Move back to larger radius (here31.221 mm) mini workshop on engineering aspects of the CLIC vertex detectors

  6. Barrel layout (layer 0+1, option 1) Single hits Double layer, holding on the samemechanical structure not shownhere An option to option 1: Shifting layer 2 vs layer 1 (here 1mm), ladder per ladder to avoidoverlapping gaps mini workshop on engineering aspects of the CLIC vertex detectors

  7. Event Display (1k primarytracks)

  8. HitMap in Layer 0

  9. Hitmap Layer 0 (per Train per Chip)

  10. Occupancy per module in layer 0 %

  11. Occupancy per module in layer 0 (polar view) %

  12. Cluster size subbarrel 0 layer 0

  13. Cluster size subbarrel 1 layer 0

  14. Cluster size subbarrel 2 layer 0

  15. Cluster size subbarrel 3 layer 0

  16. Cluster size subbarrel 4 layer 0

  17. HitMap in Layer 1

  18. HitMap (per Train per mm2)

  19. Occupancy per module in layer 1 %

  20. Occupancy per module in layer 0 (polar view) %

  21. Cluster size subbarrel 0 layer 0

  22. Cluster size subbarrel 1 layer 0

  23. Cluster size subbarrel 2 layer 0

  24. Cluster size subbarrel 3 layer 0

  25. Cluster size subbarrel 4 layer 0

  26. Occupancy Simulation • 2 Scenario : • 20 um pixels, samegeometry + B-Field effect, layer 0-5 • 25 um pixels, layer back by 4mm in r + B-fieldeffects layer 0-5 • In both scenario weneed to addhadronic components, disks

  27. Lorentz angle • Lorentz angle depends on mobilitywhichdepends on Electric field and eventually on dopant concentration • In a 50um 10kOhmcm p-type wafer, 10V bias, E≈[1600,2700]V/cm • Varywithresistivity, bias voltage • In a planarsensor, E isproportional to V applied • V appliedisproportional to thickness2 (Full depletion voltage) • For thinsensor, at full depletion voltage, Electric fieldisverylow • To beinvestigated : How much over Full depletioncanweapply voltage mini workshop on engineering aspects of the CLIC vertex detectors

  28. Lorentz angle effects in Digitization • I have added as an option in the digitizer to takintoaccount the Magneticfield in the motion equation of the charge in the sensor. • The Lorentz angle iscalculatedateachintegrationsteptakingintoaccount : • Local mobility and electricfield • Hall Scattering factor

  29. Lorentz angle effects (0 degrees incidence, B=4T)

  30. Lorentz angle effects (75 degrees incidence, B=4T)

  31. Lorentz angle effects (0 degrees incidence, B=4T), tilted by Lorentz angle

  32. Lorentz angle effects (0 degrees incidence, B=4T), tilted by Lorentz angle

  33. Lorentz angle effects (Cluster Size) !! Lorentz angle increases cluster size (in average) -> Increaseoccupancy

  34. DESY data withlowenergy (2-4 GeV) electrons • Wewereallowed to join ATLAS DBM testbeamat DESY to acquiresome data withTimepixusinglowenergyelectrons (2-4 GeV) (No Tracking) • 6M Frames at 100V 0 deg • 5K Frames at 0,25,50,75 deg • 5k Frames at 0deg, 5V, 10V, 50V • 5k Frames atIkrum 25,50,100 • In average 500 clusters per frame • ToT mode

  35. Some DESY plots (cluster size)

  36. Some DESY plots (cluster size)

  37. Conclusion • Detailed simulation of inner layer for CLIC_ILD new design show higheroccupanciesthan CDR numbers : • Layer is 4 mm closerthanbefore -> Higheroccupancy • Phi dependenceobserved in the end-of-stave chips • Next simulation to beperfomedwith B-Field effectsincluded, larger pixels • Lorentz angle effects have been encoded in the digitizer • Debuggedusing the new event display feature of the digitizer • Ready for use in occupanciesstudies

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