The 2 th International Conference on Advanced Electromaterials (ICAE 2013)

1. The 2th International Conference on Advanced Electromaterials (ICAE 2013) Nonvolatile Bi3.9(Ti2.9V0.1)O12 Ferroelectric One-Transistor-Capacitor Random Access Memory Kai-HuangChen1,Wen-Shan Chen2, Yu-Zung Chiou2, Yi-Pin Lin3, and Chien-Min Cheng21Department of Electronics Engineering and Computer Science, Tung-Fang Design University, Kaohsiung, Taiwan, R.O.C.2Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan, Taiwan, R.O.C.3Department of Interior Design, Tung-Fang Design University, Kaohsiung, Taiwan, R.O.C. Using RF magnetron sputtering technique, a one-transistor-capacitor (1TC) Bi3.9(Ti2.9V0.1)O12 (BTV) non-volatile ferroelectric gated oxide films memory devices were fabricated. From the measured I-V characteristics, the drain current was less than 0.5 A for VG = 0V, and a larger drain current of 80 A was obtained for VG = 20 V. Besides, the threshold voltage, transconductance, and even the sub-threshold swing characteristics were also investigated in this paper. The surface morphology and grain size of the as-deposited thin films were observed by the SEM morphology. The dielectric constant and leakage current density of the thin films were obtained from the measured C-V and J-E characteristics. And finally from the p-E curve, the remnant polarization and coercive field were discussed. Leakage current density versus applied voltage curves SEM surface image of the as-deposited BTV thin films P-E curves of the as-deposited BTV film for MIM structure The capacitance versus applied voltage curves of as-deposited BTV thin films Transfer characteristics of 1TC FRAM with BTV as its gate oxide