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High Power Diode Laser System for SHR D.Cheever, M.Farkhondeh, B.Franklin, E.Tsentalovich , T.Zwart MIT-Bates Linear Accelerator Center Middleton, MA 01949, USA. Requirements. CW TiSa laser: - any time structure can be tailored, - tunable, - moderate stability - peak power 3.5 W.
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High Power Diode Laser System for SHR • D.Cheever, M.Farkhondeh, B.Franklin, E.Tsentalovich, T.Zwart • MIT-Bates Linear Accelerator Center • Middleton, MA 01949, USA
Requirements CW TiSa laser: - any time structure can be tailored, - tunable, - moderate stability - peak power 3.5 W Pulsed TiSa laser: - peak power - hundreds Watts, - tunable - low stability - max rep. rate 10 Hz Fiber-based laser: - doesn’t work (power limitations) Diode array laser !!!
Diode array laser Power: CW mode up to 50-60 W, Pulsed mode up to 200 W Not tunable ( = 808 nm) “Emmitance” ~ 200 mm mrad Very high stability (For Gaussian-limited beam “emmitance” ~ ~ 1 mm mrad ) Very convenient in operation No maintenance needed
Matching wavelength St. Petersburg crystal (Bates data) St. Petersburg crystal SLAC crystal (at =808 nm) : QE ~ 0.2 - 0.3 %, P ~ 80 %
Optics for “monster” Pockels cell HPC /2 Extinction ratio ~ 135 (~ 200 for Gaussian beam). P > 99 %
Driver for the diode laser 1 10 laser Feedback PITA
Pulse from the fast driver Rise time ~ 0.2 usec Droop ~ 5 %
Set up for storage mode: - fast driver - slow polarization reversal with /2 plate Perfect match ! SUMMARY Set up for stretcher/(no ring) mode: - driver with feedback options - fast helicity reversal with Pockels cell Rep. rate 600 Hz Polarization reversal at 600 Hz The ability to control helicity-correlated asymmetries for parity-violating experiments needs to be demonstrated The ability to run high average current with High-P crystals over long experiments needs to be demonstrated