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Characteristics of InP Particle s Detectors Structures

Characteristics of InP Particle s Detectors Structures. B. Sopko, H. Kozak**, D. Nohavica**,D.Chren, T. Horažďovský, V. Sopko, Z. Kohout, M. Solar, S. Pospíšil*, K. Žďánský**, L. Pekárek** Department of Physics, Faculty of Mechanical Engineering,

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Characteristics of InP Particle s Detectors Structures

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  1. Characteristics of InP Particles Detectors Structures B. Sopko, H. Kozak**, D. Nohavica**,D.Chren, T. Horažďovský, V. Sopko, Z. Kohout, M. Solar, S. Pospíšil*, K. Žďánský**, L. Pekárek** Department of Physics, Faculty of Mechanical Engineering, Czech Technical University, Technická 4, 166 29 Prague 6 *Institute of Applied and Experimental Physics IAEP, Physics, CTU, Horská 3a/22, 128 00 Praha 2 **Institute of Photonics and Electronics of the ASCR, Chaberská 57, 182 51 Praha 8 11´th Workshop R&D 50

  2. Outline • motivation • initial substrate • structures • technology • results • conclusions 11´th Workshop R&D 50

  3. Motivation Physical parameters of most used semiconductors at 300 K 11´th Workshop R&D 50

  4. Initial substrate InP • SI InP : Fe , (100) n – type, • binding energy 0,64 eV 11´th Workshop R&D 50

  5. Metal InP:Fe Metal Metal InP:Mg(Zn) InP:Fe Metal InP detector structures • Schottky junction • Epilayer junction 11´th Workshop R&D 50

  6. Metal InP:Fe Metal Technology of Schottky barrier • Contact metal (6 nm Ni,60 nm AuGe, 30 nm Ni, 200 nm Au) annealing in nitrogen, 2 min. at 400oC • Schottky junctionf = 2 mm (same material not annealed) 11´th Workshop R&D 50

  7. Metal InP:Mg(Zn) InP:Fe Metal Epilayer junction technology Liquid phase epitaxy technique- epilayer of thickness 1 um Dopant Mg: 2,1.1017cm-3 MESA etch inHBr:K2Cr2:H2O Metal: On P side: AuBe (25 nm) Cr (50 nm) Au (200 nm) On N side: Ni (6nm) AuGe (60nm) Ni (30nm) Au(200 nm) 11´th Workshop R&D 50

  8. Detector on InP:Fe substrate Schottky (1) 11´th Workshop R&D 50

  9. Detector on InP:Fe substrate Schottky (2) Source 241 Am 5,48 MeV 11´th Workshop R&D 50

  10. Detector on InP:Fe substrateepilayer junction (1) Mg, T=300 K 11´th Workshop R&D 50

  11. Detector on InP:Fe substrateepilayer junction (2) Mg 11´th Workshop R&D 50

  12. Detector on InP:Fe substrate epilayer junction (3) Mg, CCE 11´th Workshop R&D 50

  13. Conclusion • technology of InP:Fe with epilayer InP:Mg was managed • detectors produced with InP:Mg epilayer have better characteristics than InP:Fe Schottky diodes at 22O K • InP:Mg epilayer structure operates at RT 11´th Workshop R&D 50

  14. Near Future Investigation • standardization of horizontal structure and technology • application of Be dopant • study of radiation hardness 11´th Workshop R&D 50

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