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EE 365

EE 365. CMOS gates Electrical characteristics and timing TTL gates. CMOS NAND Gates. Use 2 n transistors for n -input gate. CMOS NAND -- switch model. CMOS NAND -- more inputs (3). Inherent inversion. Non-inverting buffer:. 2-input AND gate:. CMOS NOR Gates.

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EE 365

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  1. EE 365 CMOS gatesElectrical characteristics and timingTTL gates

  2. CMOS NAND Gates • Use 2n transistors for n-input gate

  3. CMOS NAND -- switch model

  4. CMOS NAND -- more inputs (3)

  5. Inherent inversion. • Non-inverting buffer:

  6. 2-input AND gate:

  7. CMOS NOR Gates • Like NAND -- 2n transistors for n-input gate

  8. NAND NOR NAND vs. NOR • For a given silicon area, PMOS transistors are “weaker” than NMOS transistors. • Result: NAND gates are preferred in CMOS.

  9. Limited # of inputs in one gate • 8-input CMOS NAND

  10. Fancy stuff • CMOS AND-OR-INVERT gate

  11. CMOS Electrical Characteristics • Digital analysis works only if circuits are operated in spec: • Power supply voltage • Temperature • Input-signal quality • Output loading • Must do some “analog” analysis to prove that circuits are operated in spec. • Fanout specs • Timing analysis (setup and hold times)

  12. DC Loading • An output must sink current from a load when the output is in the LOW state. • An output must source current to a load when the output is in the HIGH state.

  13. Output-voltage drops • Resistance of “off” transistor is > 1 Megohm, but resistance of “on” transistor is nonzero, • Voltage drops across “on” transistor, V = IR • For “CMOS” loads, current and voltage drop are negligible. • For TTL inputs, LEDs, terminations, or other resistive loads, current and voltage drop are significant and must be calculated.

  14. Example loading calculation • Need to know “on” and “off” resistances of output transistors, and know the characteristics of the load.

  15. Calculate for LOW and HIGH state

  16. Limitation on DC load • If too much load, output voltage will go outside of valid logic-voltage range. • VOHmin, VIHmin • VOLmax, VILmax

  17. Output-drive specs • VOLmax and VOHmin are specified for certain output-current values, IOLmax and IOHmax. • No need to know details about the output circuit, only the load.

  18. Input-loading specs • Each gate input requires a certain amount of current to drive it in the LOW state and in the HIGH state. • IIL and IIH • These amounts are specified by the manufacturer. • Fanout calculation • (LOW state) The sum of the IIL values of the driven inputs may not exceed IOLmax of the driving output. • (HIGH state) The sum of the IIH values of the driven inputs may not exceed IOHmax of the driving output. • Need to do Thevenin-equivalent calculation for non-gate loads (LEDs, termination resistors, etc.)

  19. Manufacturer’s data sheet

  20. TTL Electrical Characteristics

  21. TTL LOW-State Behavior

  22. TTL HIGH-State Behavior

  23. TTL Logic Levels and Noise Margins • Asymmetric, unlike CMOS • CMOS can be made compatible with TTL • “T” CMOS logic families

  24. TTL levels CMOS with TTL Levels -- HCT, FCT, VHCT, etc. CMOS vs. TTL Levels CMOS levels

  25. Fig 3-84

  26. TTL differences from CMOS • Asymmetric input and output characteristics. • Inputs source significant current in the LOW state, leakage current in the HIGH state. • Output can handle much more current in the LOW state (saturated transistor). • Output can source only limited current in the HIGH state (resistor plus partially-on transistor). • TTL has difficulty driving “pure” CMOS inputs because VOH = 2.4 V (except “T” CMOS).

  27. AC Loading • AC loading has become a critical design factor as industry has moved to pure CMOS systems. • CMOS inputs have very high impedance, DC loading is negligible. • CMOS inputs and related packaging and wiring have significant capacitance. • Time to charge and discharge capacitance is a major component of delay.

  28. Transition times

  29. Circuit for transition-time analysis

  30. HIGH-to-LOW transition

  31. Exponential fall time t = RC time constant exponential formulas, e-t/RC

  32. LOW-to-HIGH transition

  33. Exponential rise time

  34. Transition-time considerations • Higher capacitance ==> more delay • Higher on-resistance ==> more delay • Lower on-resistance requires bigger transistors • Slower transition times ==> more power dissipation (output stage partially shorted) • Faster transition times ==> worse transmission-line effects (Chapter 11) • Higher capacitance ==> more power dissipation (CV2f power), regardless of rise and fall time

  35. Open-drain outputs • No PMOS transistor, use resistor pull-up

  36. What good is it? • Open-drain bus • Problem -- really bad rise time

  37. Open-drain transition times • Pull-up resistance is larger than a PMOS transistor’s “on” resistance. • Can reduce rise time by reducing pull-up resistor value • But not too much

  38. Important Tables in Chapter 3

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