IMOS-Based Inverter Simulation

1. IMOS-Based Inverter Simulation Sam Maurus Matthias Ritter

2. NMOS vs. PMOS • Only dependant on geometry (gate placement) NMOS PMOS

3. Sweep Source Voltage

4. Sweep Drain Voltage

5. PMOS Gate-Modulated Breakdown

6. Breakdown – PMOS

7. Electron/Hole Density – PMOS Gate Gate ] Electron density Hole density

8. NMOS Gate-Modulated Breakdown

9. Breakdown – NMOS

10. Electron/Hole Density – NMOS Gate Gate ] Electron density Hole density

11. Symmetry…

12. Inverter using Dessis Mixed-Mode Vdd Vdd Vdd Vdd Vdd pmos pmos pmos pmos Vdd Vout Vout Vout Vout Vin Vin Vin Vin Vss Vdd Vdd nmos nmos nmos nmos Vss Vss Vss Vss Vss Vdd Vin Vss Vdd

13. Inverter using Dessis Mixed-Mode Device PMOS { File {...} Electrode {...} Physics {...} } Vdd pmos Vout Vin System{  NMOS a1 ( "source"=vss  "drain"=out "gate"=in  box=0 )  PMOS a2 ( "source"=out  "drain"=vdd "gate"=in  box=0 )  } nmos Vss Device NMOS { File {...} Electrode {...} Physics {...} }

14. Output Voltage – Inverter

15. Output Current – Inverter

16. Summary • Simulation of n-channel IMOS and p-channel IMOS • Breakdown slope of ~0.13dec/mV • Symmetric characteristics could in future be achieved by choosing appropriate work functions and biasing voltages • Symmetry is an enabling characteristic for creating basic logic gates • Simulation of IMOS-based inverter • Basic inverter output characteristics seen from simulations • Sentaurus editor provides flexibility to define arbitrary devices

17. Thanks for listening 