1 / 13

Candidacy Discussion

Candidacy Discussion. Robert J. Sleezer 04 April 2008. Apology for Repeated (Missing) Table. [4, 5]. Passive Components, Technology, and Year. [2, 3]. Capacitor Uses. Power. Load Circuit. Decoupling. Ground. Precision. Bypass. AC Signal. Capacitor Application Guidelines. [6].

gaille
Download Presentation

Candidacy Discussion

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Candidacy Discussion Robert J. Sleezer 04 April 2008

  2. Apology for Repeated (Missing) Table [4, 5]

  3. Passive Components, Technology, and Year [2, 3]

  4. Capacitor Uses Power Load Circuit Decoupling Ground Precision Bypass AC Signal

  5. Capacitor Application Guidelines [6]

  6. Optimizing Capacitance Permittivity of free space is a constant Dielectric constant depends on the material Cost of real estate limits area At only a few atoms thick leakage current becomes a problem

  7. Commercially Available Composites [4, 5]

  8. CWFC fabrication Ferroelectric Growth on LiF Au Metallization of Ferroelectric Fabrication and Au Metallization of Target Cold Welding of Au Surfaces Dissolving of LiF Metallization for Top Electrode

  9. Multilayer Capacitor Pad Pad Feroelectric

  10. CWFC on Reverse of chip Ferroelectric Growth on LiF Fabrication of Device on Top Si Surface Au Metallization of Ferroelectric Au Metallization Si Bottom Surface Cold Welding of Au Surfaces Dissolving of LiF Metallization for Top Electrode Creation of Through Wafer Vias Dicing of wafer Wire Bonding and Packaging

  11. FeRAM Ferroelectric Growth on LiF Fabrication of Driving Circuitry Patterning and Metallization of Top Electrodes Au Metallization of Ferroelectric Patterning and Au Metallization of Si Dicing of wafer Wire Bonding and Packaging Cold Welding of Au Surfaces Dissolving of LiF Patterning and Etching (RIE)

  12. Materials Engineering • Semiconductor superlattice first proposed by Esaki and Tsu in 1969 • Altering superlattice parameters changes material characteristics • Layer thickness • Layer composition • Number of layers Z. Shi-Ning, Z. Yong-Yuan, and M. Nai-Ben, "Engineered ferroelectric superlattice materials and applications," in Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on, 2000, pp. 313-315 vol. 1.

  13. PZT Heterolayers • Superlattice composed of Pb(ZrxTi1-x)O3 with x equal to 0.3 and 0.7 F. C. Kartawidjaja, C. H. Sim, and J. Wang, "Ferroelectric and dielectric behavior of heterolayered PZT thin films," Journal of Applied Physics, vol. 102, pp. 124102-6, 2007

More Related