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RF&A/MS Summer 2012

RF&A/MS Summer 2012. Chapter overview Membership Application drivers Technologies CMOS, Bipolar, III-V, HVMOS, Passives Outlook. RF&A/MS Chapter. Broadened scope in 2011 to include analog applications Described in Mixed-Signal section of System Drivers chapter

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RF&A/MS Summer 2012

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  1. RF&A/MS Summer 2012 Chapter overview Membership Application drivers Technologies CMOS, Bipolar, III-V, HVMOS, Passives Outlook

  2. RF&A/MS Chapter • Broadened scope in 2011 to include analog applications • Described in Mixed-Signal section of System Drivers chapter • Reviewing added scope for 2013: higher voltages, heterogeneous integration • Only minor table updates for 2012 • Chapter organization is aligned by device technology • CMOS, Si Bipolar, III-V, HVMOS, Passives • Close cross-TWG interaction with • A&P, Design/SysDrivers, ERD, Interconnect, MEMs, PIDS

  3. Membership Sony KaneyoshiTakeshita Teledyne Scientific Miguel Urteaga TI KamelBenaissa Wibovan Noort Toshiba Tatsuya Ohguro TU Dresden/UCSD Michael Schroter UC Riverside Albert Wang Univ. of Michigan Mina Rais-Zedah (Passives) Univ. of Toronto SorinVoinigescu UT/Dallas Sam Shichijo IBM Jack Pekarik, Dawn Wang, Mattias Dahlstrom(CMOS), Jean-Olivier Plouchart, Natalie Feilchenfeld(HVMOS) IEEE Anthony Immorlica Jr. ITRS Linda Wilson TowerJazz Semiconductor Ed Preisler NIST Herbert Bennett NXP Peter Magnèe OMMIC Marc Rocchi PMC-Sierra Brian Gerson HormozDjahanshahi Raytheon Tom Kazior (III-V) Renesas Yoshihiro Hayashi Samsung Hansu Oh Sony KaneyoshiTakeshita SRC David Yeh ST Pascal Chevalier(Bipolar) Analog Devices Ali Eshraghi David Robertson Craig Wilson AMD Emerson Fang Freescale Jay John, JiangkaiZuo Fujitsu Toshiro Futatsugi Hitachi Ltd. DighHisamoto HRL James Li 38 Active members 27 N. America, 4 Europe, 7 Asia

  4. System Drivers • Circuit-level FOMs related to device technology FOMs • Low-noise amplifier (LNA) • Voltage-controlled oscillator (VCO) • Power amplifier (PA) • Analog-to-digital converter (ADC) • Serializer-Deserializer (SerDes) • Example PA, LNA FOM

  5. CMOS • Reflect the RF & Analog performance of PIDS technologies • fT, fMAX, NFMIN, analog gain, flicker noise, matching • Capture parasitic resistances and capacitances using Interconnect & FEP roadmaps. • fTincreases faster compared to 2009 roadmap  No change for 2012 2013: • TCAD-based model following PIDS methods • Need to account for realistic layout & resulting parasitic impedances

  6. Bipolar 2012 update : Minor changes in the table have occurred • High-Speed NPN • fT increase delayed by one year and related parameters (WE, BVCEO, BVCBO, JC at peak fT, NFMIN and SLi updated accordingly) • fMAX and MAG/MSG values unchanged 2.High-Speed PNP • No change in data • Coloring updated for fLE (linearity efficiency) 2013 update : Major changes expected for HS NPN • High-Speed NPN • Move to a simulation-based roadmap using TCAD + Compact modeling • Move to performance plateaus (3 to 4 years) linked to driving applications • Evaluation of the impact of BEOL parasictics on RF FoM (common to CMOS) 2. High-Speed PNP • Move to performance plateaus too • FOM & data update

  7. III-V technologies • Analog, Microwave, mm-wave applications • Emphasis on mm-wave • Production dates of scaled InP HEMT, InP HBT and GaN HEMT shifted one year (release date driven by ‘pull’ for technology) • Technology roadmaps truncated at expected end of scaling • GaAs PHEMT(2015), GaAs Power MHEMT(2019), InP Power HEMT(2023), • Low Noise GaAs MHEMT and InP HEMT, InP HBT and GaN HEMT expected to continue scaling • For FETs, currently D-mode only, plan to add E-mode device in 2013 revision • FOMs depending on technology • fT, fMAX, gm, VBD, • Power, gain, efficiency @ 10, 24, 60, 94, 140, 220 GHz • NFMIN, GA @ 10, 24, 60, 94 GHz • LNA NF, GA @ 140, 220 GHz

  8. HVMOS • New section in 2011, membership with this expertise doubled this month • HVNMOS & HVPMOS devices • Power-management & Display-driver applications • FOM • Now: BVDSS,RON x area,Integrated CMOS node • Leave roadmap as-is for 2012 • Expand application space to higher voltages • Add Automotive and Industrial applications • Revise roadmap for 2013: devices & FOMs • Will impact passive device roadmap

  9. Passive Devices • No major revisions since 2009 • 2012 • Keep table framework – treating on-chip passives • Refresh FOM values vs time • 2013 • Synchronize with application-based framework of chapter • Capture unique requirements of example applications • Reflect Silicon, HVMOS & III-V capability

  10. Outlook & future considerations • Medical applications • Non-MEMs Sensors • Imaging • Automotive, Industrial & Instrumentation • Define primitive functions needed to implement applications in the roadmap • Apply also to emerging device technologies

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