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Toward Graphene Electronics Gregory S. Boebinger , Florida State University, DMR 0654118 DC Field Facility User Program.
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Toward Graphene ElectronicsGregory S. Boebinger, Florida State University, DMR 0654118DC Field Facility User Program Graphene, a single layer of carbon atoms arranged in a 2-D hexagaonallattice, is providing exciting new results in both scientific and technical arenas. Researchers at Purdue University and the Magnet Lab have measured the quantum Hall effect in a monolayer of graphene on a Silicon Carbide substrate with an integral gate. The fact that one can observe the quantum Hall effect points to the high quality of this two-dimensional electron gas and indicates that graphene grown and processed in such a way has a real potential for use in “real-world” semiconducting devices. T. Shen, J.J. Gu, M. Xu, Y. Q. Wu, M.L. Bolen, M.A. Capano, L.W. Engel and P. D. Ye, Appl. Phys. Lett., 95, 172105 (2009).
Toward Graphene ElectronicsGregory S. Boebinger, Florida State University, DMR 0654118DC Field Facility User Program The fact that one can fabricate a monolayer of carbon atoms on a substrate with a gate electrode on top and have a high enough quality device to observe the Quantum Hall Effect demonstrates that graphene has a real potential to become the technology that will allow the semiconductor industry to continue to provide faster and smaller high performance devices. As silicon technology moves toward quantum mechanical limits, graphene has been predicted to be the technology that will overcome those limits. These results clearly show that graphene has moved past the earliest samples cleaved with scotch tape to become a robust technology compatible with modern semiconductor mass production technology. Fabrication facility for graphene devices at Purdue University.