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Beyond Silicon… Advanced Power Electronics for FACTS Technology

Beyond Silicon… Advanced Power Electronics for FACTS Technology. Jerry Melcher APE Initiative Lead Energy Delivery and Utilization. Initiative Objectives. Why are we doing this? Where are we going?. Power Electronics The Thyristor. Thyristor - SCR. Power Progress for Si.

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Beyond Silicon… Advanced Power Electronics for FACTS Technology

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  1. Beyond Silicon…Advanced Power Electronics for FACTS Technology Jerry Melcher APE Initiative Lead Energy Delivery and Utilization

  2. Initiative Objectives • Why are we doing this? • Where are we going?

  3. Power ElectronicsThe Thyristor

  4. Thyristor - SCR

  5. Power Progress for Si

  6. Initiative Objectives • Why are we doing this? • Si Power Devices are Reaching Their Fundamental Limits of Performance. • Where are we going?

  7. The “Diamond” Structure

  8. Si Electrons 3p 3s

  9. E { EG k Physics of Semiconductors k•p Perturbation Theory

  10. Chemistry of Semiconductors

  11. Initiative Objectives • Why are we doing this? • Si Power Devices are Reaching Their Fundamental Limits of Performance. • Where are we going? • SiC and GaN have Breakdown Electrical Fields ~10 Times Higher than Si. Both 4 Times the Forward Current…at the Same Unit Cost! (maybe)

  12. EPRI/DARPA13-18 M$, 3 Years • Nasa-Lewis SiC • Northrup-Grumman SiC • Vanderbilt University SiC • Silicon Power Corp SiC • University of Florida GaN • Cal Tech GaN

  13. Advantages of Post-Silicon Materials CVDProperty Si 3C SiC (6C SiC) Diamond GaN Importance Bandgap (300K) 1.1 2.2 (2.9) 5.5 3.4 Blocking Voltage Maximum Operating 500 >900 (>1000) 1400 >800 Limits Power Flow Temp (K) Breakdown Voltage 0.3 4 10 5 Maximum (Eb, 106 V/cm) Power Capacity Hole Mobility 600 40 1600 200 Switching Speed (RT, cm2/Vs) Thermal Conductivity 1.5 5 20 1.3 Cooling Rate (CT, w/cm)

  14. Boule 2000 C SiC Charge 2200 C Sublimation SiC Growth RF Coils H2 SiH4 C3H8 HCL N2 Al(Me)3 6H-SiC Substrate CVD

  15. SiC: Progress in Wafer Size

  16. SiC: Wafer Price vs. Year

  17. b = 6b0 surface energy,  = 4 J/m2 shear modulus, G = 200 GPa 2 m Micropipes form to relieve strain around super-screw dislocations. Defects: Micropipes

  18. SiC: Micropipe Density vs. Year

  19. 3 6 1 2 7 4 8 5 SiC: Record µPipe Density

  20. SiC Thyristor:Forward Voltage

  21. SiC Diode:Reverse Characterisitics

  22. What About GaN& Diamonds? See OutPost 8 “Why Diamonds are a Girl’s Best Friend!”

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