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Optoelectronic Simulation of PhotoDetectors

Tarun Parmar Microrelectronic Engineering R.I.T. Optoelectronic Simulation of PhotoDetectors. Outline. Introduction Comparison of Photodetectors Photon detection Device Simulation Optoelectronic Device Simulator Results. Introduction.

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Optoelectronic Simulation of PhotoDetectors

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  1. Tarun Parmar Microrelectronic Engineering R.I.T. Optoelectronic Simulation of PhotoDetectors

  2. Outline • Introduction • Comparison of Photodetectors • Photon detection • Device Simulation • Optoelectronic Device Simulator • Results

  3. Introduction • The poster presents simulation of recombination rate and quantum efficiency of an photodetector (photodiode) being fabricated at RIDL. • Simulated total integrated recombination rate significantly contributes to the reverse diode leakage current. • Quantum efficiency is defined as the ratio of the number of carriers detected at a given photodetector electrode divided by the number of incident photons on the detector.

  4. Comparison of Photodetectors Generic Operating Parameters of Si, Ge, and GaAs pin Photodiodes [Source: Optical Communications Essentials, Gerd Keiser, pp 113.]

  5. Photon Detection • pin photodiode operated in reverse bias • p+ – high acceptor concentration • intrinsic (lightly) doped material • n+ –high donor concentration • I-V characteristics of pin photodiode: • (1) with no light • (2) with light

  6. Device Simulation

  7. Optoelectronic Device Simulator Luminous is an advanced simulator used to model absorption and photogeneration in semiconductor devices Silvaco Athena simulation tool Process simulation uses Athena & Electrical simulation uses Atlas, Luminous Graphs are generated using Tonyplot

  8. Tonyplot Results (1) Quantum Efficiency Recombination Rate 0.258 e-/sec/pixel

  9. Tonyplot Results (2) Electric field in 2D Electric field in 3D

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