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Lam2300 多晶矽與介電質乾蝕刻機 標準製程

Lam2300 多晶矽與介電質乾蝕刻機 標準製程. 多晶矽製程腔體系統 : Poly gate Film Stack etch. Poly CD map. 91.3 nm. ER summary. Poly. Oxide. PR. Poly ME. Poly OE. 多晶矽製程腔體系統 : Poly film Base Line E/R Test Result. ADI:135nm. PR 250nm. BARC 96nm. PSG 870nm. SiN200 nm. 介電質製程腔體系統 : Exelan OX Contact Film Stack.

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Lam2300 多晶矽與介電質乾蝕刻機 標準製程

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  1. Lam2300多晶矽與介電質乾蝕刻機 標準製程

  2. 多晶矽製程腔體系統:Poly gate Film Stack etch Poly CD map 91.3 nm • ER summary

  3. Poly Oxide PR Poly ME Poly OE 多晶矽製程腔體系統:Poly film Base Line E/R Test Result

  4. ADI:135nm PR 250nm BARC 96nm PSG 870nm SiN200 nm 介電質製程腔體系統:Exelan OX Contact Film Stack • LET :10°C, UET:140°C, 200mm • Recipe • BARC : 70mT/ 400W(27)/ 190CF4/ 10O2/ 6O2/ 50%CW / He 20T/20T / 40” • ME:50mT/ 1600(27)/ 1175(2)/ 300Ar/ 28C4F8/ 10O2/ 50%CW/ He 20T/20T/ 90”

  5. 介電質製程腔體系統:Exelan OX Contact Base Line E/R Test Result • LET :10°C, UET:140°C, 200mm • Recipe • ME:50mT/ 1600(27)/ 1175(2)/ 300Ar/ 28C4F8/ 10O2/ 50%CW/ He 20T/20T/ 60” SiN OX The numbers are E/R: Å/60s

  6. 介電質製程腔體系統:Summary Exelan OX Contact

  7. 光阻去除灰化製程腔體系統:P.R strip Base Line E/R Test Result Strip recipe :750mT/1500W/100N2/1000O2 TiN PR OX SiN

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