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IBD Reactive deposition

IBD Reactive deposition. Dielectric characterization. Refractive index 1.68 ~ saphire. Composition analysis: metal contamination, stoichiometry (Al:O). Rutherford Backscattering analysis of a IBD deposited Al 2 O 3 film . T otal level of metal contamination < 400ppm.

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IBD Reactive deposition

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  1. IBD Reactive deposition

  2. Dielectric characterization Refractive index1.68 ~ saphire

  3. Composition analysis: metal contamination, stoichiometry (Al:O) Rutherford Backscattering analysis of a IBD deposited Al2O3 film. Total level of metal contamination < 400ppm • Dielectric breakdown voltage dependence on: • oxide thickness • contact area

  4. Film stress, adhesion Dual-Stripe disk head INESC (1998) 5 mm sputtered AlN 5 mm AlN film delamination after disk head slider fabrication.

  5. Vacuum systems

  6. Nordiko 3600 IBD system donation from Seagate (Ireland)

  7. Rotary pumps Turbomolecular pumps Cryogenic pumps Momentum transfer from the disks to the gas molecules. Separation rotor to disks ~ free mean path (molecular regime) • - 1st stage pumps • ultimate pressure ~10-4 Torr • Requires a purge vapor line • - 2nd stage pumps • ultimate pressure ~10-10 Torr • requires a backing pump • - 2nd stage pumps • ultimate pressure ~10-11 Torr

  8. Ultimate pressure detection ~10-4 Torr Ultimate pressure detection ~10-11 Torr Ultimate pressure detection ~10-7 Torr Pressure increase  lower filament temperature  Lower resistance

  9. Bibliography • Nanoelectronics and information technology – Advanced Electronic Materials and Novel Devices, Chap.8, Rainer Waser (Ed.), Wiley-VCH (2003) • VLSI Technology, S.M.Sze, McGraw-Hill International Editions • Sputtering: user reference guide – Nordiko internal report • Spin Electronics - Chap.13, M.Ziese and M.J.Thornton (Ed.), Lecture Notes in Physics, Springer-Verlag • Tecnologia de Vácuo, A.M.C.Moutinho, M.E.F.Silva, M.A.Cunha, Univ.Nova de Lisboa (Ed.) • Solid State Technology, p.35-40, January 2003

  10. M.Tan, “Ion beam deposition: meeting the challenge of thinner films”, Data Storage, pp.35-38, January 1996 • C.S.Bhatia, G.Guthmiller and A.M.Spool, “Alumina Films by sputter deposition with Ar/O2: preparation and characterization”, J.Vac.Sci.Technol. A 7 (3), pp.1298-1302, May/Jun 1989 • R.S.Nowicki, “Properties of RF-sputtered Al2O3 films deposited by planar magnetron”, J.Vac.Sci.Technol. Vol. 14 (1), pp.127-133, Jan/Feb 1977 • V.Gehanno, P.P.Freitas, A.Veloso, J.Ferreira, B.Almeida, J.B.Sousa, A.Kling, J.C.Soares and M.F.da Silva, “Ion Beam deposition of Mn-Ir spin valves”, IEEE Trans. Magn., vol.35, pp.4361-4367 (1999) • M.Scherer, W.Lehnert, M.Stakic and N.Kling, “Insulating layers for the MR/GMR read elements”, PROXIMITY- Magnetic Storage Industry Sourcebook, p.24, 1998 • Atomic Layer Deposition special report, Solid State Technology, pp.35, January 2003 • M.Tan, S-In Tan and Y.Shen, “Ion beam deposition of Alumina for recording head applications”, IEEE Trans. Magn., vol.31, pp.2694-2696 (1995)

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