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Introduction to Nanoheat; Aspel group. 20030910. TCAD. Collision-dominated quasi-ballistic. Double gate device/ quantum confinement. Conduction subband vs. position. Electron distribution function vs. position under high gate bias (top of the barrier).
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Introduction toNanoheat; Aspel group 20030910
TCAD • Collision-dominated quasi-ballistic
Electron distribution function vs. position under high gate bias (top of the barrier)
E-k relation (top of the barrier) under high gate bias: Vds=0/ small/ large
I-V characteristic for ballistic MOSFET (T>0, nondegenerate)
Average carrier velocity & inversion layer density (ballistic/ with scattering)
Electron injected into the channel undergoing its first scattering event
Essential physical picture of steady-state carrier transport in the nanoscale MOSFET bottleneck
Monet • Continuum classical heat diffusion equation • Boltzmann transport equation (phonon) • Q’’’: electron-phonon interactions
Monte Carlo simulation • Semi-classical approach (1) Scattering rate (2) Free flight (F=ma) • Fermi-Golden Rule
Cornell Aspel group • Primary research area- develop high speed interconnect system for chip-to-chip communication including receivers, transmitters, link architectures in CMOS, and stochastic encoding
Optical properties of sapphire substrate 300nm~ (6um)
Commercial 850nm GaAs/AlGaAs-quantum-well vertical-cavity surface emitting lasers (VCSELs) and 980nm InGaAs/AlGaAs VCSELs were used as front and back emitting structures, respectively.
“A high performance SiGe/Si MQW heterojunction phototransistor,” IEEE Trans. Electron Device (under revision), 2003
“A 7mW 1Gbps CMOS Optical Receiver For Through Wafer Communication”, accepted Proceedings of the International Symposium on Circuits and Systems, 2003