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IIV and CV Measurements of rd50-(2551-6, 2551-4, 2552-7) Sadia Khalil VELO Group Meeting

IIV and CV Measurements of rd50-(2551-6, 2551-4, 2552-7) Sadia Khalil VELO Group Meeting. Rd50-2551 Sensors. S1. S2. L. S3. Properties Provided by Micron semiconductor Limited. FZ (float Zone) technology  >8 cm N on P V dep = 40V V dep(expected) = = 43.3V

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IIV and CV Measurements of rd50-(2551-6, 2551-4, 2552-7) Sadia Khalil VELO Group Meeting

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  1. IIV and CV Measurements of rd50-(2551-6, 2551-4, 2552-7) Sadia Khalil VELO Group Meeting

  2. Rd50-2551 Sensors S1 S2 L S3

  3. Properties Provided by Micron semiconductor Limited • FZ (float Zone) technology • >8cm • N on P • Vdep = 40V • Vdep(expected) = = 43.3V • Thickness = d = 312m

  4. Bulk Current and GR Current for all 2551-6 sensors.

  5. CV Measurements

  6. Vdep = -50V, micron provided value = -40V

  7. Vdep = -53V, micron provided value = -40V

  8. Vdep = -48V, micron provided value = -40V

  9. rd50-2551-4

  10. Properties Provided by Micron semiconductor Limited • FZ (float Zone) technology • >8cm • N on P • Vdep = 40V • Vdep(expected) = = 43.6V • Thickness = d = 313m

  11. Bulk Current and GR Current for all 2551-4 sensors.

  12. CV Measurements

  13. Vdep = -72V, micron provided value = -40V

  14. Vdep = -74V, micron provided value = -40V

  15. Vdep = -75V, micron provided value = -40V

  16. rd50-2552-7

  17. S1 S2 L S3

  18. Bulk Current and GR Current for all 2552-7 sensors.

  19. CV Measurements

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