Top: Schematics of damage buildups under different amorphization model.

1. Radiation Response and Defect Dynamics in Strained SiLin Shao, Texas Engineering Experiment Station, DMR 0905142 The project is to study radiation response of strained Si, and to understand the effects of “being stretched” on ion irradiation induced defect clustering. The knowledge concerns applications of a wide range of strained technologies for novel microelectronics. In parallel to multiscale modeling activities, we performed cluster ion irradiation in which Si is bombarded by atomic clusters. Each cluster contains multiple atoms and their simultaneous arrivals on the surface cause significant overlap of individual damage tracks. Atomic scale modeling reveals how a strained crystalline structure becomes amorphous under ion irradiation. The knowledge is very helpful to develop a predictive capability to understand the integrity of the strained devices used in harsh environments such as outer space. n=1 n=2 n=3 n=4 Top: Schematics of damage buildups under different amorphization model. Bottom: MD simulation of damage cascade in strained Si caused by Agn cluster bombardments.

2. Radiation Response and Defect Dynamics in Strained SiLin Shao, Texas Engineering Experiment Station, DMR 0905142 The project supported high school teacher summer research. The project has led to international collaboration with Peking University to study strain changes under ion irradiation. The project supported two summer undergraduate student interns to conduct research. One teacher from the E3 program (Enrichment Experience in Engineering for Teachers) spent one month on the project and brought her experience back to the classroom. Two senior undergraduate students (Amos and Galicki) were supported by the project as summer interns.