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الکترونیک صنعتی

الکترونیک صنعتی. دانشگاه تهران – بهزاد آسائی 1385. ترانزیستور. Bipolar Junction Transistors (BJTs). ترانزیستور. Generic BJT Application Clamped Inductive Load. ترانزیستور. Bipolar Junction Transistors (BJTs). MOSFET I-V Characteristics and Circuit Symbols.

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الکترونیک صنعتی

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  1. الکترونیک صنعتی دانشگاه تهران – بهزاد آسائی 1385

  2. ترانزیستور Bipolar Junction Transistors (BJTs) BY: B. Asaei

  3. ترانزیستور Generic BJT Application Clamped Inductive Load BY: B. Asaei

  4. ترانزیستور Bipolar Junction Transistors (BJTs) BY: B. Asaei

  5. MOSFET I-V Characteristics and Circuit Symbols BY: B. Asaei

  6. MOSFET Switching Models for Buck Converter • Buck converter using power MOSFET. • MOSFET equivalent circuit valid for on-state (triode) region operation. • MOSFET equivalent circuit valid for off- state (cutoff) and active region operation. BY: B. Asaei

  7. Turn-on Equivalent Circuits for MOSFET Buck Converter BY: B. Asaei

  8. MOSFET-based Buck Converter Turn-on Waveforms • Free-wheeling diode assumed to be ideal. (no reverse recovery current). BY: B. Asaei

  9. Paralleling of MOSFETs BY: B. Asaei

  10. ارزیابی • As shown in Figure 1.1, a variety of circuitries in power electronics can be produced today with • MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) or IGBTs (Insulated Gate • Bipolar Transistors), which were introduced into the market one by one in the mid 80’s. • Compared to other switchable power semiconductors, such as conventional GTO-thyristors, • these types of transistors have a number of application advantages, such as active turn-off even • in case of short-circuit, operation without snubbers, simple control unit, short switching times • and, therefore, relatively low switching losses. • The production of MOSFETs and IGBTs is comparatively simple and favourable and can easily • be managed by today’s technologies in microelectronics. • It was mainly due to the rapid development of IGBTs and power MOSFETs that power • electronics continued open up new markets, and that their fields of application increased • tremendously at the same time. Bipolar high-voltage power transistors that were still very • common a few years ago, have been almost completely replaced by IGBTs. BY: B. Asaei

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